Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 632/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
2.574 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 340pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
6.264 |
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- | P-Channel | MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 270pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
5.904 |
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- | P-Channel | MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 270pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK |
4.410 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK |
3.780 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 11A D2PAK |
5.328 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | ±30V | 1423pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 11A D2PAK |
7.110 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52nC @ 10V | ±30V | 1423pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 31A D2PAK |
8.496 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2370pF @ 25V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 31A D2PAK |
5.994 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2370pF @ 25V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK |
6.156 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2520pF @ 25V | - | 3.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A D2PAK |
4.176 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A D2PAK |
4.374 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 31A TO-262 |
6.246 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2370pF @ 25V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 200V 31A TO-262 |
2.358 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2370pF @ 25V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 41A TO-262 |
8.838 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±30V | 2520pF @ 25V | - | 3.1W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO-262 |
2.916 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 9.2A TO-262 |
2.934 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 50V 8.2A I-PAK |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 8.2A (Tc) | 10V | 200mOhm @ 4.2A, 10V | 4V @ 250µA | 10nC @ 10V | ±20V | 250pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A I-PAK |
7.254 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 50V 5.3A I-PAK |
3.222 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-220AB |
5.184 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 10A TO-262 |
4.140 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
4.284 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 10A D2PAK |
7.344 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-262 |
5.616 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
3.996 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
8.280 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
3.348 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK |
4.176 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO-262 |
2.160 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |