Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 562/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
HIGH POWER_NEW |
3.888 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
HIGH POWER_NEW |
2.700 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 500V 40A TO-268 |
6.966 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 140mOhm @ 500mA, 10V | 4.5V @ 4mA | 130nC @ 10V | ±30V | 3800pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 200V 160A TO-264 |
3.168 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 160A (Tc) | 10V | 13mOhm @ 500mA, 10V | 4V @ 250µA | 415nC @ 10V | ±20V | 12900pF @ 25V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH |
3.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 2200V | 600mA (Tc) | 10V | 80Ohm @ 300mA, 10V | 4V @ 250µA | 10.4nC @ 10V | ±20V | 290pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
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Microsemi |
MOSFET N-CH 600V 60A D3PAK |
7.956 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190nC @ 10V | ±30V | 7200pF @ 25V | Super Junction | 431W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 33A TO-264 |
4.662 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 33A (Tc) | 10V | 170mOhm @ 500mA, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 4900pF @ 25V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1000V 18A ISOPLUS247 |
7.686 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 340mOhm @ 16A, 10V | 6.5V @ 1mA | 225nC @ 10V | ±30V | 14200pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 600V 47A ISOPLUS247 |
6.606 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 500V 24A TO-247 |
8.064 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 20V | 300mOhm @ 500mA, 20V | 5V @ 250µA | 160nC @ 20V | ±30V | 2500pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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Microsemi |
MOSFET N-CH 800V 43A T-MAX |
5.652 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 43A (Tc) | 10V | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8070pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 500V 44A TO-264AA |
4.986 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 120mOhm @ 22A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 7000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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ON Semiconductor |
MOSFET N-CH 650V 75A |
8.568 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 25mOhm @ 37.5A, 10V | 4.5V @ 3mA | 236nC @ 10V | ±30V | 7330pF @ 400V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
HIGH POWER_NEW |
5.688 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 500V 80A PLUS247 |
6.678 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 80A (Tc) | 10V | 65mOhm @ 40A, 10V | 5V @ 8mA | 197nC @ 10V | ±30V | 12700pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 650V 97A TO-264 |
4.140 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 97A (Tc) | 10V | 41mOhm @ 48.5A, 10V | 3.5V @ 2.96mA | 300nC @ 10V | ±20V | 7650pF @ 25V | - | 862W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 200V 156A ISOPLUS247 |
5.868 |
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GigaMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 156A (Tc) | 10V | 8mOhm @ 60A, 10V | 5V @ 8mA | 378nC @ 10V | ±20V | 28000pF @ 25V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 47A TO-247 |
7.344 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 4V @ 2mA | 650nC @ 10V | ±20V | - | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXKH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 10A ISOPLUS247 |
3.600 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 10A (Tc) | 10V | 1.1Ohm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | ±20V | 2900pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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Microsemi |
MOSFET N-CH 800V 41A T-MAX |
2.124 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 41A (Tc) | 10V | 240mOhm @ 20A, 10V | 5V @ 2.5mA | 260nC @ 10V | ±30V | 8070pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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MICROSS/On Semiconductor |
DIE MOSFET N-CH 200V UNIFET |
6.876 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 1200V 20A ISOPLUS247 |
6.264 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 20A (Tc) | 10V | 750mOhm @ 500mA, 10V | 4.5V @ 8mA | 160nC @ 10V | ±30V | 7400pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 40A ISOPLUS247 |
2.214 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 110mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 7000pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 300V 110A TO-264 |
6.156 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 110A (Tc) | 10V | 26mOhm @ 500mA, 10V | 4V @ 250µA | 390nC @ 10V | ±20V | 7800pF @ 25V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 48A TO-264AA |
4.698 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 4V @ 8mA | 270nC @ 10V | ±20V | 8400pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 48A TO-264 |
8.136 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 7000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
250V/150A ULTRA JUNCTION X3-CLAS |
7.992 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 150A (Tc) | 10V | 9mOhm @ 75A, 10V | 4.5V @ 4mA | 154nC @ 10V | ±20V | 10400pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1200V 20A TO-264 |
3.598 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 20A (Tc) | 10V | 750mOhm @ 500mA, 10V | 4.5V @ 8mA | 160nC @ 10V | ±30V | 7400pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 800V 27A PLUS 247 |
2.124 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 27A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170nC @ 10V | ±20V | 7600pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 150A TO-264AA |
8.712 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 150A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 9000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |