Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 533/999
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
2.610 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 13975pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET NCH 40V 240A D2PAK |
6.840 |
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* | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 4.5V, 10V | 0.75mOhm @ 100A, 10V | 2.4V @ 250µA | 266nC @ 4.5V | ±16V | 16488pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 55V 160A TO262-7 |
8.676 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7820pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-7 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4.896 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 1000V 2A TO-263 |
8.550 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 2A (Tc) | 10V | 7Ohm @ 1A, 10V | 4.5V @ 250µA | 18nC @ 10V | ±20V | 825pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 22A TO220-3 |
6.390 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 165mOhm @ 11A, 10V | 4V @ 250µA | 45nC @ 10V | ±45V | 1950pF @ 100V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 100V 33.5A D2PAK |
3.978 |
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Automotive, AEC-Q101, QFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 33.5A (Tc) | 10V | 60mOhm @ 16.75A, 10V | 4V @ 250µA | 110nC @ 10V | ±25V | 2910pF @ 25V | - | 3.75W (Ta), 155W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 55V 140A TO-220 |
3.562 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 140A (Tc) | 10V | 5.4mOhm @ 50A, 10V | 4V @ 250µA | 82nC @ 10V | ±20V | 4760pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 11.5A TO-220SIS |
7.920 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25nC @ 10V | ±30V | 890pF @ 300V | Super Junction | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
HIGH POWER_NEW |
4.140 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics America |
MOSFET N-CH 1500V 2.5A TO-3P |
4.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2.5A (Ta) | 15V | 12Ohm @ 2A, 15V | - | - | ±20V | 990pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 1200V 1.4A TO-263 |
7.272 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 1.4A (Tc) | 10V | 13Ohm @ 500mA, 10V | 4.5V @ 100µA | 24.8nC @ 10V | ±20V | 666pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 40V 270A |
8.136 |
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TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 270A (Tc) | 10V | 2.4mOhm @ 50A, 10V | 4V @ 250µA | 182nC @ 10V | ±15V | 9140pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 40V 340A |
2.628 |
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TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 340A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 250µA | 256nC @ 10V | ±15V | 13000pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-220 |
2.772 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-220 |
8.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68nC @ 10V | ±30V | 1900pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600V 25A TO220-3 |
8.820 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 12.5A, 10V | 4V @ 250µA | 74nC @ 10V | ±30V | 3352pF @ 100V | - | 216W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 60A TO-263 |
4.032 |
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Trench™ | N-Channel | MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 40mOhm @ 30A, 10V | 5V @ 250µA | 73nC @ 10V | ±20V | 4530pF @ 25V | - | 500W (Tc) | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 800V 10A TO-247 |
7.866 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 1.1Ohm @ 5A, 10V | 5.5V @ 2.5mA | 40nC @ 10V | ±30V | 2050pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
3.564 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 300A D2PAK-7P |
3.618 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 4.5V, 10V | 1.9mOhm @ 180A, 10V | 2.5V @ 250µA | 160nC @ 4.5V | ±16V | 11270pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 105A AUTO |
5.166 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 5320pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 105A AUTO |
7.128 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 5320pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET NCH 200V 72A D2PAK |
8.082 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 0.2A DPAK |
3.562 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 200mA (Tc) | - | 30Ohm @ 50mA, 0V | - | - | ±20V | 120pF @ 25V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 200V 50A TO-263 |
6.858 |
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PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 200V | 50A (Tc) | 10V | 60mOhm @ 50A, 10V | 5V @ 250µA | 70nC @ 10V | ±20V | 2720pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 1A SAWN ON FOIL |
4.068 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 260µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 40V 295A TO262WL |
6.030 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.8mOhm @ 187A, 10V | 4V @ 250µA | 225nC @ 10V | ±20V | 7978pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Wide | TO-262-3 Wide Leads |
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IXYS |
MOSFET N-CH 600V 14A TO-247 |
2.376 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 550mOhm @ 7A, 10V | 5.5V @ 2.5mA | 36nC @ 10V | ±30V | 2500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 19A TO247-3 |
8.118 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1500pF @ 400V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |