Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 520/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 16V 18A PPAK SO-8 |
5.958 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 16V | 18A (Ta) | 2.5V, 4.5V | 3mOhm @ 29A, 4.5V | 2V @ 250µA | 80nC @ 4.5V | ±8V | 7340pF @ 8V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
2.736 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 135mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Infineon Technologies |
HIGH POWER_NEW |
7.902 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12.5A TO-220SIS |
8.028 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 12.5A (Ta) | 10V | 470mOhm @ 6.3A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1550pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 13.5A TO-220SIS |
8.226 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 13.5A | - | 410mOhm @ 6.8A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 140A TO220AB |
6.948 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 140A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 3650pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 29A TO220 |
4.230 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95nC @ 10V | ±20V | 2990pF @ 380V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 22A TO247 |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 260mOhm @ 11A, 10V | 4.5V @ 250µA | 83nC @ 10V | ±30V | 3710pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
HIGH POWER_LEGACY |
4.248 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO247 |
8.874 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3 |
6.426 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 5660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 352A SO8FL |
3.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 0.75mOhm @ 50A, 10V | 2V @ 250µA | 181nC @ 10V | ±20V | 12168pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 600V 28A TO220 |
2.052 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 130mOhm @ 14A, 10V | 3.5V @ 250µA | 70nC @ 10V | ±20V | 3590pF @ 380V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 370A 5DFN |
2.304 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 370A (Tc) | 4.5V, 10V | 0.67mOhm @ 50A, 10V | 2V @ 250µA | 81nC @ 4.5V | ±20V | 12168pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 500V 13A TO-247 |
8.874 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36nC @ 10V | ±20V | 1420pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 60V 35A 250A 5DFN |
8.406 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Ta), 250A (Tc) | 4.5V, 10V | 1.3mOhm @ 50A, 10V | 2V @ 250µA | 89nC @ 10V | ±20V | 6680pF @ 30V | - | 3.3W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 40V 206A SUPER-220 |
7.020 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 206A (Tc) | 10V | 3.7mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 300W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Vishay Siliconix |
MOSFET N-CH 300V 6.1A TO-220AB |
8.946 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 750mOhm @ 3.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 430pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A IPAK |
4.590 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-262 |
2.628 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4.608 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 101W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 600V 10A TO-220 |
8.712 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 740mOhm @ 5A, 10V | 5.5V @ 1mA | 32nC @ 10V | ±30V | 1610pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 6A TO-220 |
7.884 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 500mOhm @ 6A, 10V | 5.5V @ 1mA | 29nC @ 10V | ±30V | 1830pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1200V 0.8A TO-263 |
5.382 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 800mA (Tc) | 10V | 25Ohm @ 500mA, 10V | 4.5V @ 50µA | 14nC @ 10V | ±20V | 333pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 2A TO-263 |
5.454 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 2A (Tc) | 10V | 7.5Ohm @ 500mA, 10V | 4.5V @ 100µA | 24.3nC @ 10V | ±20V | 655pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1200V 800MA TO-220 |
7.146 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 800mA (Tc) | 10V | 25Ohm @ 500mA, 10V | 4.5V @ 50µA | 14nC @ 10V | ±20V | 333pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 4A TO-220 |
2.934 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 3.3Ohm @ 2A, 10V | 5V @ 250µA | 26nC @ 10V | ±20V | 1456pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 200V 36A TO-263 |
2.754 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 700MA TO-220 |
2.376 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 700mA (Tc) | 10V | 17Ohm @ 375mA, 10V | 4.5V @ 25µA | 7.8nC @ 10V | ±30V | 260pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 750MA TO-251 |
2.394 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 750mA (Tc) | 10V | 17Ohm @ 375mA, 10V | 4.5V @ 250µA | 7.8nC @ 10V | ±30V | 260pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |