Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 511/999
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
4.392 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5.3mOhm @ 100A, 10V | 3.5V @ 120µA | 91nC @ 10V | ±20V | 6540pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 59A D2PAK |
5.202 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 18.5A TO263 |
3.562 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 18.5A (Ta), 105A (Tc) | 6V, 10V | 3.2mOhm @ 20A, 10V | 3.5V @ 250µA | 178nC @ 10V | ±20V | 7765pF @ 40V | - | 2.1W (Ta), 272.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 30V 100A 8VSON |
4.572 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Ta) | 4.5V, 10V | 1.15mOhm @ 40A, 10V | 1.7V @ 250µA | 51nC @ 4.5V | ±20V | 9200pF @ 15V | - | 3.2W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 260A D2PAK |
8.730 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 260A (Tc) | 4.5V, 10V | 3mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | ±20V | 5890pF @ 15V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 55V 110A TO-220 |
5.076 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 100µA | 67nC @ 10V | ±20V | 3080pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
PT8 40V/20V NCH POWERTRENCH MOSF |
7.362 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 49A (Ta), 300A (Tc) | 4.5V, 10V | 0.85mOhm @ 47A, 10V | 3V @ 250µA | 219nC @ 10V | ±20V | 16590pF @ 20V | - | 3.33W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
HIGH POWER_NEW |
7.596 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CHANNEL 600V 9A TO220F |
5.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 4.5A, 10V | 4V @ 250µA | 29nC @ 10V | ±30V | 1240pF @ 100V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO262 |
3.006 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET P-CH 200V 11A TO-262 |
6.048 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1200pF @ 25V | - | 3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220 |
2.808 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220 |
2.772 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 2.5A 4-DIP |
8.766 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 10V | 100mOhm @ 1.5A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Vishay Siliconix |
MOSFET N-CH 60V 14A I-PAK |
2.790 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 11A TO-220SIS |
6.552 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Ta) | 10V | 600mOhm @ 5.5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
3.186 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | ±20V | 2860pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 40V 110A D2PAK |
6.660 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 3.5mOhm @ 30A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 6800pF @ 25V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 55A D2PAK |
6.660 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | - | 26mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | - | 3700pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
PSMN3R7-100BSE/SOT404/D2PAK |
5.544 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Ta) | 10V | 3.95mOhm @ 25A, 10V | 4V @ 1mA | 246nC @ 10V | ±20V | 16370pF @ 50V | - | 405W (Ta) | 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 75A D2PAK |
4.716 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
6.588 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | ±20V | 2860pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 20A SO8FL |
3.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 210A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2.2V @ 250µA | 62.1nC @ 4.5V | ±20V | 10930pF @ 15V | - | 1.06W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Vishay Siliconix |
MOSFET N-CH 400V 10A D2PAK |
4.050 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36nC @ 10V | ±30V | 1030pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
5.526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | ±20V | 5000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CHANNEL_30/40V |
7.596 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 800V 1A TO-220 |
8.424 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1A (Tc) | 10V | 14Ohm @ 500mA, 10V | 4V @ 50µA | 9nC @ 10V | ±20V | 250pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET N-CH 40V 150A TO220AB |
7.974 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 10V | 4mOhm @ 20A, 10V | 3V @ 250µA | 48nC @ 10V | 20V | 2846pF @ 20V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 25V 61A DIRECTFET L6 |
8.496 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 61A (Ta), 270A (Tc) | 4.5V, 10V | 0.7mOhm @ 61A, 10V | 2.35V @ 150µA | 96nC @ 4.5V | ±20V | 6500pF @ 13V | - | 4.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 60A TO-220AB |
3.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 60A | - | 9mOhm @ 30A, 10V | - | 75nC @ 10V | - | - | - | 128W | - | Through Hole | TO-220-3 | TO-220-3 |