Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 492/999
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Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 200V 39A TO220F |
5.598 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 39A (Tc) | 10V | 66mOhm @ 19.5A, 10V | 5V @ 250µA | 49nC @ 10V | ±30V | 2130pF @ 25V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET BVDSS: 61V-100V TO220AB T |
8.478 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V | 9.5mOhm @ 13A, 10V | 4V @ 250µA | 56.4nC @ 10V | ±20V | 4468pF @ 50V | - | 2.5W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 2A TO-220SIS |
6.570 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 2A (Ta) | 10V | 3.26Ohm @ 1A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 10A SO8FL |
8.550 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 50A (Tc) | 6V, 10V | 15mOhm @ 20A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 1300pF @ 50V | - | 3.1W (Ta), 77W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 35A DIRECTFET |
3.474 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Ta), 213A (Tc) | 4.5V, 10V | 1.1mOhm @ 35A, 10V | 2.1V @ 100µA | 62nC @ 4.5V | ±16V | 5435pF @ 13V | Schottky Diode (Body) | 2.1W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 200V 3.4A DIRECTFET |
7.740 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.4A (Ta), 19A (Tc) | 10V | 100mOhm @ 4.2A, 10V | 5V @ 100µA | 36nC @ 10V | ±20V | 1500pF @ 25V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 100V 10A DIRECTFET |
2.808 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta) | 4.5V, 10V | 10mOhm @ 31A, 10V | 2.5V @ 150µA | 66nC @ 4.5V | ±16V | 5305pF @ 25V | - | 2.5W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M4 | DirectFET™ Isometric M4 |
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Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI506 |
5.004 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 30V 156A TO-220AB |
6.156 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
LOW POWER_LEGACY |
4.248 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 400µA | 41nC @ 10V | ±20V | 1100pF @ 100V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 200V 20A WPAK |
3.150 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 20A (Ta) | 10V | 85mOhm @ 10A, 10V | - | 19nC @ 10V | ±30V | 1200pF @ 25V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | WPAK(3F) (5x6) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 60V 38A 250A 5DFN |
2.034 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta), 250A (Tc) | 4.5V, 10V | 1.36mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Nexperia |
MOSFET N-CH 40V 120A D2PAK |
4.284 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.6mOhm @ 25A, 10V | 4V @ 1mA | 145nC @ 10V | ±20V | 11340pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 60V 120A D2PAK |
5.004 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 25A, 10V | 4V @ 1mA | 158nC @ 10V | ±20V | 11180pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRANSISTOR N-CH |
3.312 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
8.892 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 6.5mOhm @ 80A, 10V | 3.5V @ 90µA | 64nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
PLANAR >= 100V |
6.804 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 41A TO220FP |
2.880 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 5.5V @ 250µA | 110nC @ 10V | ±20V | 2520pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 100A DPAK |
2.250 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 1.98mOhm @ 90A, 10V | 3.9V @ 100µA | 155nC @ 10V | ±20V | 5171pF @ 25V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 18A TO-220AB |
4.752 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Ta) | - | 42mOhm @ 9A, 10V | - | 33nC @ 10V | - | - | - | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 15A D2PAK |
5.562 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 3.8V @ 250µA | 15.6nC @ 10V | ±30V | 717pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 60V 100A 8DFN |
3.618 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 1.58mOhm @ 20A, 10V | 3.4V @ 250µA | 120nC @ 10V | ±20V | 7790pF @ 30V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 20A TO220 |
2.646 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Ta), 140A (Tc) | 6V, 10V | 3mOhm @ 20A, 10V | 3.2V @ 250µA | 115nC @ 10V | ±20V | 9800pF @ 30V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V TO220AB TU |
2.682 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 205A (Tc) | 10V | 3mOhm @ 90A, 10V | 4V @ 250µA | 75.6nC @ 10V | ±20V | 6865pF @ 20V | - | 156W | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
TRENCH 8 80V NFET |
7.308 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 23A (Ta), 157A (Tc) | 10V | 2.8mOhm @ 50A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 4120pF @ 40V | - | 3.8W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 40V 112A DIRECTFET |
7.146 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 179A (Tc) | 4.5V, 10V | 3mOhm @ 67A, 10V | 2.5V @ 150µA | 78nC @ 4.5V | ±16V | 5055pF @ 25V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M4 | DirectFET™ Isometric M4 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 20A TO220 |
6.876 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 370mOhm @ 10A, 10V | 4.5V @ 250µA | 74nC @ 10V | ±30V | 3680pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Nexperia |
MOSFET N-CH 75V 75A D2PAK |
7.560 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 165nC @ 10V | ±20V | 8250pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 75A TO220AB |
2.394 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 8.8mOhm @ 25A, 10V | 4V @ 1mA | 156nC @ 10V | ±20V | 8250pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 60V 110A D2PAK |
3.114 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4555pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |