Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 487/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Alpha & Omega Semiconductor |
MOSFET N CH 80V 16A TO220 |
7.200 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 16A (Ta), 105A (Tc) | 6V, 10V | 4.5mOhm @ 20A, 10V | 3.3V @ 250µA | 100nC @ 10V | ±20V | 5154pF @ 40V | - | 2.1W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 15A TO262 |
4.374 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 80V | 15A (Ta), 105A (Tc) | 6V, 10V | 4.3mOhm @ 20A, 10V | 3.3V @ 250µA | 100nC @ 10V | ±20V | 5154pF @ 40V | - | 1.9W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
TRANSISTOR N-CH |
4.716 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 25V 35A PPAK 1212-8 |
8.982 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 5.1mOhm @ 20A, 10V | 2.5V @ 250µA | 40nC @ 10V | ±20V | 1600pF @ 12.5V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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ON Semiconductor |
MOSFET N-CH 30V 40A TO220 |
2.862 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.2A (Ta) | 4.5V, 10V | 13.1mOhm @ 20A, 10V | 2.5V @ 250µA | 17nC @ 11.5V | ±20V | 895pF @ 12V | - | 2.4W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2.754 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
TRENCH 6 40V SL NFET |
3.996 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 31A (Ta), 185A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 180µA | 69nC @ 10V | ±20V | 4850pF @ 25V | - | 3.9W (Ta), 134W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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Infineon Technologies |
MOSFET N-CH 100V 50A TO262-3 |
7.632 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 4.5V, 10V | 15.7mOhm @ 50A, 10V | 2.4V @ 60µA | 64nC @ 10V | ±20V | 4180pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH 30V 10A 8SOIC |
3.580 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 20mOhm @ 5.6A, 10V | 2.04V @ 250µA | 92nC @ 10V | ±20V | 1700pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 27A MX |
5.688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | ±20V | 4404pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Nexperia |
MOSFET N-CH 60V 120A D2PAK |
4.320 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 10170pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 80V 120A D2PAK |
7.776 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.2mOhm @ 25A, 10V | 4V @ 1mA | 136nC @ 10V | ±20V | 10426pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 9A 4VSON |
5.922 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 17nC @ 10V | ±20V | 790pF @ 100V | - | 83W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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ON Semiconductor |
MOSFET N-CH 75V 58A TO-220AB |
5.670 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 9A (Ta), 58A (Tc) | 6V, 10V | 16mOhm @ 58A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 1857pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 50A 330A 5DFN |
2.412 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.82mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
2.934 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 5.2A, 10V | 4.5V @ 430µA | 25.5nC @ 10V | ±20V | 1190pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N CH 25V 40A POWER33 |
7.362 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 5mOhm @ 18A, 10V | 1.8V @ 250µA | 12nC @ 10V | ±12V | 1695pF @ 13V | - | 3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ™ 33 | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 120V 70A I2PAK |
7.668 |
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- | N-Channel | MOSFET (Metal Oxide) | 120V | 70A (Tc) | 10V | 7.9mOhm @ 25A, 10V | 4V @ 1mA | 167nC @ 10V | ±20V | 9473pF @ 60V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia |
MOSFET N-CH 120V 70A TO-220AB |
7.164 |
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- | N-Channel | MOSFET (Metal Oxide) | 120V | 70A (Tc) | 10V | 7.9mOhm @ 25A, 10V | 4V @ 1mA | 167nC @ 10V | ±20V | 9473pF @ 60V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Diodes Incorporated |
MOSFET N-CH 900V 2.5A ITO220AB |
4.482 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 7Ohm @ 1A, 10V | 5V @ 250µA | 7.9nC @ 10V | ±30V | 470pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 60V 38A 250A 5DFN |
4.500 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta), 250A (Tc) | 4.5V, 10V | 1.36mOhm @ 50A, 10V | 2V @ 250µA | 91nC @ 10V | ±20V | 6660pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 60V 100A 8DFN |
7.974 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 2.1mOhm @ 20A, 10V | 3.2V @ 250µA | 100nC @ 10V | ±20V | 4850pF @ 30V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 22A TO220 |
3.472 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 260mOhm @ 11A, 10V | 4.5V @ 250µA | 83nC @ 10V | ±30V | 3710pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 200V 12A TO-220FM |
5.058 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 12A (Tc) | 10V | 325mOhm @ 6A, 10V | 5.25V @ 1mA | 15nC @ 10V | ±30V | 740pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 150V 5.4A POWER33 |
3.672 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 5.4A (Ta), 25A (Tc) | 6V, 10V | 34mOhm @ 5.4A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 1330pF @ 75V | - | 2.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 150V 55.5A TO220AB |
4.086 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 55.5A (Tc) | 10V | 30mOhm @ 25A, 10V | 4V @ 1mA | 98nC @ 10V | ±20V | 3680pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 80A TO-263 |
2.934 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.5mOhm @ 80A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 2980pF @ 25V | - | 94W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
2.718 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±30V | 600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO-220SIS |
7.686 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 123A TO262 |
2.646 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 123A (Tc) | 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | ±20V | 3183pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |