Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 482/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 20V 13.5A 1212-8 |
7.308 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 13.5A (Ta) | 4.5V, 10V | 5.3mOhm @ 21.1A, 10V | 2.5V @ 250µA | 21nC @ 4.5V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 30A 8-SOIC |
2.448 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | 5370pF @ 15V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 30A 8-SOIC |
8.694 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | 5370pF @ 15V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 12V 35A PPAK 1212-8 |
3.564 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 35A (Tc) | 2.5V, 4.5V | 3.7mOhm @ 26.1A, 4.5V | 1.8V @ 250µA | 70nC @ 10V | ±12V | 2800pF @ 6V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK 1212-8 |
2.196 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 6.6mOhm @ 18.9A, 10V | 1.5V @ 250µA | 31.5nC @ 4.5V | ±12V | 2610pF @ 15V | - | 3.78W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A PPAK SO-8 |
5.148 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 6V, 10V | 10mOhm @ 12A, 10V | 4.5V @ 250µA | 70nC @ 10V | ±20V | 2850pF @ 30V | - | 5.2W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Diodes Incorporated |
MOSFET N-CH 60V 100A PWRDI5060-8 |
4.590 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta), 100A (Tc) | 10V | 3.1mOhm @ 50A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 2.1W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3-1 |
5.400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.3mOhm @ 80A, 10V | 2.2V @ 35µA | 60nC @ 10V | +20V, -16V | 4690pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 35A TO252 |
7.776 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 7V, 10V | 26mOhm @ 12A, 10V | 4.4V @ 250µA | 47nC @ 10V | ±20V | 2000pF @ 12V | - | 8.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
4.356 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | ±20V | 3400pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
8.046 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 32A (Tc) | 8V, 10V | 30mOhm @ 16A, 10V | 4.6V @ 32µA | 13nC @ 10V | ±20V | 950pF @ 75V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 50A 330A 5DFN |
4.680 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta), 330A (Tc) | 4.5V, 10V | 0.82mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO220SIS |
5.850 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 80V 60A POWERPAKSO-8 |
6.642 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.8V @ 250µA | 90nC @ 10V | ±20V | 2900pF @ 40V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 40V 120A D2PAK |
6.984 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2mOhm @ 25A, 10V | 4V @ 1mA | 109.2nC @ 10V | ±20V | 8500pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 35A 185A 5DFN |
5.670 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 185A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 3.5V @ 250µA | 47nC @ 10V | ±20V | 3300pF @ 25V | - | 3.8W (Ta), 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 13A TO263 |
3.726 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 13A (Ta), 70A (Tc) | 6V, 10V | 5.7mOhm @ 20A, 10V | 3.3V @ 250µA | 63nC @ 10V | ±20V | 3142pF @ 40V | - | 2.1W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 25V 54A SO8FL |
134 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 54A (Ta), 334A (Tc) | 4.5V, 10V | 0.7mOhm @ 30A, 10V | 2.1V @ 250µA | 85nC @ 10V | ±20V | 5693pF @ 12V | - | 3.2W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 61A TO220AB |
5.256 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO252-3-11 |
5.922 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 12V 11A 8-SOIC |
2.988 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 11A (Ta) | 2.5V, 4.5V | 5.5mOhm @ 17A, 4.5V | 600mV @ 250µA (Min) | 30nC @ 4.5V | ±8V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Sanken |
MOSFET N-CH 500V TO-220F |
5.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4V @ 1mA | - | ±30V | 650pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Nexperia |
BUK7Y1R4-40H/SOT669/LFPAK |
7.146 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
SUPERFET3 650V TO220 PKG |
3.526 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 600mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | ±30V | 465pF @ 400V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 60V 8A TO263 |
5.112 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta), 78A (Tc) | 4.5V, 10V | 16.5mOhm @ 20A, 10V | 2.5V @ 250µA | 100nC @ 10V | ±20V | 6400pF @ 30V | - | 2.1W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
BUK9Y1R3-40H/SOT669/LFPAK |
3.978 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Texas Instruments |
MOSFET P-CH 15V 1.27A 8-TSSOP |
2.106 |
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- | P-Channel | MOSFET (Metal Oxide) | 15V | 1.27A (Ta) | 2.7V, 10V | 180mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45nC @ 10V | +2V, -15V | - | - | 504mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Diodes Incorporated |
MOSFET N-CH 650V 7.7A ITO220AB |
3.204 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 650V | 7.7A (Tc) | 10V | 1.4Ohm @ 2.5A, 10V | 4V @ 250µA | 25.2nC @ 10V | ±30V | 886pF @ 50V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 800V 4A TO220F |
4.680 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.3Ohm @ 2A, 10V | 4.5V @ 400µA | 21nC @ 10V | ±20V | 880pF @ 100V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
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ON Semiconductor |
MOSFET N-CH 600V 10.2A TO-220F |
2.196 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 40nC @ 10V | ±20V | 1665pF @ 25V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |