Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 418/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 600V 0.9A DPAK |
4.518 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 900mA (Tc) | 10V | 12Ohm @ 450mA, 10V | 4V @ 250µA | 7.7nC @ 10V | ±30V | 215pF @ 25V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 2.3A SOT-223 |
7.074 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 2.3A (Tc) | 5V | 220mOhm @ 1.15A, 5V | 2V @ 250µA | 15nC @ 5V | ±20V | 440pF @ 25V | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Sanken |
MOSFET N-CH 30V 26A 8DFN |
2.196 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 6.2mOhm @ 31A, 10V | 2.5V @ 350µA | 24.6nC @ 10V | ±20V | 1480pF @ 15V | - | 3.1W (Ta), 46W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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Sanken |
MOSFET N-CH 40V 11A 8DFN |
8.784 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 11A (Ta) | 4.5V, 10V | 8.3mOhm @ 23.3A, 10V | 2.5V @ 350µA | 24.9nC @ 10V | ±20V | 1470pF @ 25V | - | 3.1W (Ta), 46W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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Sanken |
MOSFET N-CH 60V 7A 8DFN |
3.762 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4.5V, 10V | 15mOhm @ 15.5A, 10V | 2.5V @ 350µA | 23.7nC @ 10V | ±20V | 1510pF @ 25V | - | 3.1W (Ta), 46W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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Sanken |
MOSFET N-CH 100V 4A 8DFN |
2.214 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4A (Ta) | 4.5V, 10V | 47.7mOhm @ 9.3A, 10V | 2.5V @ 350µA | 23nC @ 10V | ±20V | 1530pF @ 25V | - | 3.1W (Ta), 46W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 30V 5A 6WSON |
8.514 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 3V, 8V | 30mOhm @ 4A, 8V | 1.8V @ 250µA | 2.7nC @ 4.5V | +10V, -8V | 340pF @ 15V | - | 2.4W (Ta), 17W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-WDFN Exposed Pad |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 2.5A IPAK |
3.798 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.5A (Tc) | 10V | 3.5Ohm @ 1.25A, 10V | 4.5V @ 250µA | 12nC @ 10V | ±30V | 370pF @ 25V | - | 56.8W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET N-CH 30V 17.6A POWERDI |
7.974 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 17.6A (Ta) | 4.5V, 10V | 4.6mOhm @ 13.5A, 10V | 2.3V @ 250µA | 86nC @ 10V | ±20V | 3690pF @ 10V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH |
5.706 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 32A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2.2V @ 250µA | 42nC @ 10V | ±20V | 2160pF @ 15V | - | 6.2W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
3.490 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
6.894 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
2.304 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 12V | 9.1A (Ta) | 1.2V, 4.5V | 16mOhm @ 8.2A, 4.5V | 800mV @ 250µA | 42.6nC @ 5V | ±8V | 2953pF @ 4V | - | 660mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-PowerUDFN |
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Diodes Incorporated |
MOSFET N-CHANNEL 30V 16A 8SO |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2.1V @ 250µA | 64.2nC @ 10V | ±20V | 2714pF @ 15V | - | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8 |
3.564 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 40A (Tc) | 6V, 10V | 12mOhm @ 20A, 10V | 3.1V @ 73µA | 45nC @ 10V | ±25V | 3360pF @ 15V | - | 2.1W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 9.8A 8SOIC |
8.172 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 10V, 20V | 12.1mOhm @ 7.8A, 20V | 2.4V @ 25µA | 14nC @ 4.5V | ±25V | 1270pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 28A DPAK |
3.690 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 25V30V POWERDI333 |
8.838 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta) | 4.5V, 10V | 14.5mOhm @ 10.4A, 10V | 2.2V @ 250µA | 19.3nC @ 10V | ±12V | 4310pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 28A 8DFN |
8.478 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 30V 85A 8DFN |
2.124 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 85A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2V @ 250µA | 20nC @ 4.5V | ±12V | 1900pF @ 15V | - | 32.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 600V 3.1A TO-251-3 |
3.204 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 49W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
CONSUMER |
7.812 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET P-CH 20V 3.6A 6-TSOP |
7.632 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 9nC @ 4.5V | ±12V | - | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 6.5A TO251A |
7.092 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.6V @ 250µA | 33nC @ 10V | ±20V | 1800pF @ 20V | - | 2.3W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Diodes Incorporated |
MOSFET N-CH 30V POWERDI3333-8 |
8.874 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 18.6mOhm @ 10A, 10V | 1.8V @ 250µA | 11.3nC @ 10V | ±25V | 580pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 24A POWERDI5060 |
4.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Tc) | 4.5V, 10V | 50mOhm @ 5.1A, 10V | 3V @ 250µA | 8.8nC @ 10V | ±20V | 584pF @ 25V | - | 2.9W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 200V 4.6A IPAK |
8.082 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 4.6A (Tc) | 10V | 800mOhm @ 2.3A, 10V | 4V @ 250µA | 16nC @ 10V | ±30V | 390pF @ 25V | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 2A TO251A |
2.322 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1A, 10V | 4.5V @ 250µA | 11nC @ 10V | ±30V | 325pF @ 25V | - | 56.8W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT23 |
3.960 |
|
SIPMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8nC @ 7V | ±20V | 68pF @ 10V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 7A 8-SOIC |
6.228 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 30mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |