Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 350/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MV POWER MOS |
4.914 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 150V | 114A (Tc) | 8V, 10V | 7.3mOhm @ 57A, 10V | 4.6V @ 160µA | 61nC @ 10V | ±20V | 4700pF @ 75V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 120A D2PAK-3 |
2.844 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 2.7mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | ±20V | 10300pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 100V 110A TO-220 |
3.690 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 7mOhm @ 55A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 5500pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 120A TO263 |
2.376 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 4.5V, 10V | 10.1mOhm @ 30A, 10V | 2.5V @ 250µA | 190nC @ 10V | ±20V | 7000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 28A |
6.390 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | ±25V | 2400pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 600 V, 0.195 OHM TYP., |
6.966 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 220mOhm @ 9A, 10V | 5V @ 250µA | 29nC @ 10V | ±25V | 1055pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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IXYS |
MOSFET N-CH 500V 3A TO220AB |
4.464 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | - | 1.5Ohm @ 1.5A, 0V | - | 40nC @ 5V | ±20V | 1070pF @ 25V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 120A TO220AB |
5.130 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 4.5V, 10V | - | 2.5V @ 250µA | 190nC @ 10V | ±20V | 7000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 21A |
5.400 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 5V @ 250µA | 34nC @ 10V | ±25V | 1500pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 6.2A TO-220FP |
7.074 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6.2A (Tc) | 10V | 1.5Ohm @ 3.1A, 10V | 4.5V @ 100µA | 46nC @ 10V | ±30V | 1320pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
7.776 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 3094pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 41A TO-247AC |
6.030 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 55mOhm @ 25A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2800pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 60V 195A TO247 |
3.798 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | ±20V | 13703pF @ 25V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 75V 240A POWERSO-10 |
513 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 75V | 240A (Tc) | 10V | 2.6mOhm @ 120A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 6800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
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STMicroelectronics |
MOSFET N-CH 24V 280A POWERSO-10 |
6.372 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 24V | 200A (Tc) | 10V, 5V | 1mOhm @ 80A, 10V | 2V @ 250µA | 109nC @ 10V | ±20V | 7055pF @ 15V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
4.986 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.5mOhm @ 60A, 10V | 3.8V @ 250µA | 180nC @ 10V | ±20V | 12800pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 900V 18.5A D2PAK |
2.430 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 900V | 18.5A (Tc) | 10V | 299mOhm @ 9A, 10V | 5V @ 100µA | 43nC @ 10V | ±30V | 1645pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 900V 11A TO-247 |
5.508 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 800V 11A D2PAK |
6.318 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6nC @ 10V | ±30V | 1630pF @ 25V | - | 150W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 3A D2PAK |
5.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 3A (Tc) | - | 5.5Ohm @ 1.5A, 0V | - | 37.5nC @ 5V | ±20V | 1020pF @ 25V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 26A TO220FP |
5.634 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 125mOhm @ 13A, 10V | 4V @ 250µA | 45.5nC @ 10V | ±25V | 1781pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO220 |
3.258 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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IXYS |
FET N-CHANNEL |
7.128 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 50mOhm @ 19A, 10V | 4.5V @ 1mA | 35nC @ 10V | ±20V | 2240pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK-6 |
4.626 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 10V | 2.1mOhm @ 90A, 10V | 4V @ 250µA | 193nC @ 10V | ±20V | 13600pF @ 50V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H²PAK | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 120A TO263-3 |
2.556 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 150V | 120A | 10V | 4.8mOhm @ 100A, 10V | 4.9V @ 255µA | 84nC @ 10V | ±20V | 380pF @ 75V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 1700V 2.6A TO247-3 |
4.554 |
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PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1700V | 2.6A (Tc) | 10V | 13Ohm @ 1.3A, 10V | 5V @ 250µA | 44nC @ 10V | ±30V | 1100pF @ 100V | - | 160mW | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1700V 2.6A |
8.244 |
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PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1700V | 2.6A (Tc) | 10V | 13Ohm @ 1.3A, 10V | 5V @ 250µA | 44nC @ 10V | ±30V | 1100pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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STMicroelectronics |
MOSFET N-CH 600V 28A |
8.622 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | ±25V | 2400pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 100A TO247AC |
2.448 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 7.5V, 10V | 5.4mOhm @ 20A, 10V | 4V @ 250µA | 165nC @ 10V | ±20V | 6250pF @ 75V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 160A TO-247 |
5.544 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 10V | 7mOhm @ 25A, 10V | 4.5V @ 250µA | 132nC @ 10V | ±30V | 6600pF @ 25V | - | 430W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |