Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 342/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 60V 50A DPAK-3 |
4.086 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 21.5A (Ta), 50A (Tc) | 8V, 10V | 4.1mOhm @ 21.5A, 10V | 4V @ 250µA | 90nC @ 10V | ±20V | 6340pF @ 30V | - | 3.1W (Ta), 127W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 24A TDSON-8 |
3.510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 50mOhm @ 22A, 10V | 4V @ 60µA | 15nC @ 10V | ±20V | 1580pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 19A TDSON-8 |
6.516 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 19A (Ta), 100A (Tc) | 6V, 10V | 3.9mOhm @ 50A, 10V | 2.8V @ 36µA | 27nC @ 10V | ±20V | 2000pF @ 30V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 18.4A 8SO |
2.412 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 18.4A (Tc) | 4.5V, 10V | 8.8mOhm @ 15A, 10V | 2.8V @ 250µA | 67nC @ 10V | ±20V | 1970pF @ 50V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 36A 8-SOIC |
5.688 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 36A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2.5V @ 250µA | 285nC @ 10V | ±20V | 9685pF @ 15V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
6.516 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1.8mOhm @ 20A, 10V | 2.5V @ 250µA | 130nC @ 10V | ±20V | 4980pF @ 15V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 60A PPAK SO-8 |
6.282 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 1.55mOhm @ 20A, 10V | 2.5V @ 250µA | 150nC @ 10V | ±20V | 6000pF @ 10V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 40V 80A POWER33 |
6.462 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 80A (Tc) | 4.5V, 10V | 2.1mOhm @ 27A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 5795pF @ 20V | - | 2.3W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
2.052 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 2866pF @ 50V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 80V 17A 8-PQFN |
7.254 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 17A (Ta), 50A (Tc) | 8V, 10V | 4.8mOhm @ 17A, 10V | 4.5V @ 250µA | 95nC @ 10V | ±20V | 6290pF @ 40V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 30V 60A PPAK SO-8 |
6.390 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 3.9mOhm @ 20A, 10V | 3V @ 250µA | 250nC @ 10V | ±20V | 8650pF @ 15V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 40V 18A PWRFLAT 5X6 |
4.464 |
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Automotive, AEC-Q101, STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 4.5V, 10V | 6.5mOhm @ 9A, 10V | 1V @ 250µA | 13nC @ 4.5V | ±22V | 1800pF @ 25V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 150V 56A 8TDSON |
3.942 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 56A (Tc) | 8V, 10V | 16mOhm @ 28A, 10V | 4.6V @ 60µA | 23.1nC @ 10V | ±20V | 1820pF @ 75V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 100A 8TDSON |
4.068 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3.7mOhm @ 50A, 10V | 3.8V @ 72µA | 58nC @ 10V | ±20V | 4200pF @ 40V | - | 2.5W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 75V 100A 8QFN |
6.912 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 3.7mOhm @ 50A, 10V | 4.5V @ 250µA | 100nC @ 10V | ±20V | 5915pF @ 37.5V | - | 830mW (Ta), 104.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 100V 7.9A POWER56 |
5.724 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 100V | 7.9A (Ta), 50A (Tc) | 6V, 10V | 22mOhm @ 7.9A, 10V | 4V @ 250µA | 59nC @ 10V | ±25V | 4085pF @ 50V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Texas Instruments |
MOSFET N-CH 40V 100A 8VSON |
7.686 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.3mOhm @ 30A, 10V | 2.2V @ 250µA | 68nC @ 10V | ±20V | 5070pF @ 20V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 116A 8DSOP |
4.662 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 116A (Tc) | 10V | 4mOhm @ 50A, 10V | 4V @ 1mA | 59nC @ 10V | ±20V | 5300pF @ 40V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8 |
4.122 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 8.7mOhm @ 20A, 10V | 2.8V @ 250µA | 58nC @ 10V | ±20V | 1930pF @ 50V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET P-CH 150V 22A POWER 56 |
3.906 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 150V | 4.4A (Ta), 22A (Tc) | 6V, 10V | 53mOhm @ 4.4A, 10V | 4V @ 250µA | 63nC @ 10V | ±25V | 3905pF @ 75V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
4.410 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 5.9mOhm @ 20A, 10V | 2.8V @ 250µA | 74nC @ 10V | ±20V | 2440pF @ 40V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 200V 36A TDSON-8 |
5.526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V | 32mOhm @ 36A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 8.9A POWER56 |
6.066 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.9A (Ta), 49A (Tc) | 10V | 14.8mOhm @ 8.9A, 10V | 4.5V @ 250µA | 75nC @ 10V | ±20V | 4620pF @ 50V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 35A 8TDSON |
4.284 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 35A (Tc) | 10V | 35mOhm @ 35A, 10V | 4V @ 90µA | 30nC @ 10V | ±20V | 2410pF @ 100V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8DSOP |
6.210 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 0.8mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | ±20V | 9600pF @ 20V | - | 1W (Ta), 170W (Tc) | 175°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 100A TDSON-8 |
3.258 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.5mOhm @ 50A, 10V | 3.8V @ 115µA | 87nC @ 10V | ±20V | 6500pF @ 50V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Renesas Electronics America |
MOSFET N-CH 40V 50A LFPAK |
3.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 3.5mOhm @ 25A, 10V | 2.5V @ 1mA | 45nC @ 4.5V | ±20V | 6650pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Rohm Semiconductor |
NCH 600V 20A POWER MOSFET |
4.428 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 87A TDSON-8 |
4.086 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 87A (Tc) | 8V, 10V | 9.3mOhm @ 44A, 10V | 4.6V @ 107µA | 40.7nC @ 10V | ±20V | 3230pF @ 75V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 200V 18A TO-220 |
4.410 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 5V | 180mOhm @ 9A, 5V | 2V @ 250µA | 56nC @ 5V | ±20V | 1705pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |