Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 320/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 150V 29A POWERPAKSO |
5.364 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 29A (Tc) | 7.5V, 10V | 34.5mOhm @ 10A, 10V | 4V @ 250µA | 17nC @ 7.5V | ±20V | 740pF @ 75V | - | 69.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A 8-SOP |
2.646 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.3V @ 500µA | 46nC @ 10V | ±20V | 4400pF @ 15V | - | 1.6W (Ta), 64W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 60V 92A D2PAK |
4.140 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 92A (Tc) | 10V | 7.8mOhm @ 25A, 10V | 4V @ 1mA | 38.7nC @ 10V | ±20V | 2651pF @ 30V | - | 149W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 6.5A TO-220F |
14.280 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.5A (Tc) | 10V | 1.25Ohm @ 3.25A, 10V | 5V @ 250µA | 17nC @ 10V | ±30V | 730pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 1.7A 1212-8 |
3.852 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 1.7A (Ta) | 6V, 10V | 240mOhm @ 2.6A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Microchip Technology |
MOSFET P-CH 350V 0.231A SOT89-3 |
3.276 |
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- | P-Channel | MOSFET (Metal Oxide) | 350V | 231mA (Tj) | 3V, 10V | 15Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 200pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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STMicroelectronics |
MOSFET N-CH 30V PWRFLT2X2 |
7.110 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | - | 4.5V, 10V | 25mOhm @ 3A, 10V | 1V @ 250µA (Min) | 3.6nC @ 4.5V | ±20V | 283pF @ 24V | - | 2.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (2x2) | 6-PowerWDFN |
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Rohm Semiconductor |
AUTOMOTIVE NCH 60V 5A POWER MOSF |
7.506 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 109mOhm @ 5A, 10V | 3V @ 1mA | 8nC @ 10V | ±20V | 290pF @ 10V | - | 15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V POWER33 |
7.632 |
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PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.5V @ 1mA | 66nC @ 10V | ±20V | 4325pF @ 15V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N CH 600V 7.4A DPAK |
4.860 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 7.4A (Tc) | 10V | 600mOhm @ 3.7A, 10V | 3.5V @ 250µA | 26nC @ 10V | ±20V | 1120pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 30V 40A DPAK |
7.308 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 5V, 10V | 10.5mOhm @ 20A, 10V | 1V @ 250µA | 14nC @ 5V | ±20V | 1434pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V 50A PPAK SO-8 |
4.824 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 4.5V, 10V | 2.6mOhm @ 15A, 10V | 2.4V @ 250µA | 90nC @ 10V | ±20V | 3630pF @ 10V | - | 4.8W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 100V 32A DPAK |
2.988 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.5A (Ta), 32A (Tc) | 6V, 10V | 36mOhm @ 32A, 10V | 4V @ 250µA | 28nC @ 10V | ±20V | 1250pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 49A D2PAK |
8.460 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 49A (Tc) | 5V, 10V | 27mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 4293pF @ 25V | - | 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 59A TO-262 |
21.684 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia |
MOSFET N-CH 55V 75A D2PAK |
8.028 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7.1mOhm @ 25A, 10V | 4V @ 1mA | 53nC @ 10V | ±20V | 3760pF @ 25V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 75V 100A D2PAK |
3.654 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 7mOhm @ 25A, 10V | 2.8V @ 1mA | 123nC @ 10V | ±16V | 7600pF @ 25V | - | 204W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 20.2A SO-8 |
4.068 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 20.2A (Tc) | 7.5V, 10V | 50.5mOhm @ 10A, 10V | 4V @ 250µA | 28nC @ 7.5V | ±20V | 1450pF @ 100V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
5.706 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 600 V, 0.26 OHM TYP., |
5.616 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 100µA | 13.5nC @ 10V | ±30V | 375pF @ 100V | - | 85W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V D2PAK |
5.994 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 1.2Ohm @ 2.25A, 10V | 4V @ 250µA | 8nC @ 10V | ±25V | 232pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 40V 50A DPAK |
5.688 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 8.1mOhm @ 22A, 10V | 2.5V @ 250µA | 159nC @ 10V | ±20V | 5380pF @ 20V | - | 2.5W (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
2.898 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3.2mOhm @ 15A, 10V | 2.2V @ 250µA | 77nC @ 10V | ±20V | 3340pF @ 15V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CHANNEL 12V 25A 8SOIC |
5.886 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 25A (Tc) | 1.8V, 4.5V | 8.32mOhm @ 14A, 4.5V | 900mV @ 250µA | 151nC @ 4.5V | ±8V | 11000pF @ 6V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO252 |
4.554 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 97A (Tc) | 4.5V, 10V | 6.3mOhm @ 25A, 10V | 2.5V @ 250µA | 125nC @ 10V | ±20V | 6060pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
NEW LF VERSION OF CSD18502KCS |
20.196 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 194A (Ta) | 4.5V, 10V | 2.6mOhm @ 100A, 10V | 2.4V @ 250µA | 64nC @ 10V | ±20V | 5940pF @ 20V | - | 188W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 150V |
7.290 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 150V | 2.2A (Ta) | 6V, 10V | 255mOhm @ 2.2A, 10V | 4V @ 250µA | 16nC @ 10V | ±25V | 1130pF @ 75V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 60V 50A DPAK |
3.348 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 9.9A (Ta), 50A (Tc) | 6V, 10V | 13.5mOhm @ 50A, 10V | 4V @ 250µA | 29nC @ 10V | ±20V | 1350pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 200V 35.1A D2PAK |
2.376 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 35.1A (Tc) | 7.5V, 10V | 37.5mOhm @ 12.2A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 1172pF @ 100V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 25A TO252 |
7.362 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Tc) | 4.5V, 10V | 22mOhm @ 20A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 1975pF @ 25V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |