Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 314/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 100V 11.3A SC70-6L |
8.334 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11.3A (Tc) | 4.5V, 10V | 83mOhm @ 3.2A, 10V | 3V @ 250µA | 10nC @ 10V | ±20V | 295pF @ 50V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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IXYS Integrated Circuits Division |
MOSFET N-CH 250V SOT-223 |
6.354 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | - | 0V | 2.5Ohm @ 300mA, 0V | - | - | ±15V | 230pF @ 20V | Depletion Mode | 1.8W (Tc) | -55°C ~ 110°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK |
15.504 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1770pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 70A TO-263-3 |
13.482 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CHANNEL 40V 26A 8WDFN |
4.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 26A (Tc) | 4.5V, 10V | 14mOhm @ 5A, 10V | 2.2V @ 20µA | 3.8nC @ 4.5V | ±20V | 400pF @ 25V | - | 20W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 17A 8SOP |
3.204 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | ±20V | 2000pF @ 30V | - | 1.6W (Ta), 34W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 200V 5.5A DPAK |
3.006 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 5V, 10V | 750mOhm @ 2.75A, 10V | 2V @ 250µA | 9nC @ 5V | ±20V | 500pF @ 25V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Panasonic Electronic Components |
CSP SINGLE N-CHANNEL MOSFET |
3.708 |
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- | N-Channel | MOSFET (Metal Oxide) | 12V | 3.9A (Ta) | 1.5V, 4.5V | 24mOhm @ 1.5A, 4.5V | 1V @ 394µA | 7nC @ 4.5V | ±8V | 490pF @ 10V | - | 370mW (Ta) | -40°C ~ 85°C (TA) | Surface Mount | ULGA004-W-1010-RA01 | 4-XFLGA, CSP |
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Diodes Incorporated |
MOSFET N-CH 60V 10.3A PWDI3333-8 |
8.118 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10.3A (Ta), 45A (Tc) | 4.5V, 10V | 13mOhm @ 10A, 10V | 3V @ 250µA | 55.4nC @ 10V | ±20V | 2577pF @ 30V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 5.9A 8-SOIC |
3.472 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 2.5V, 10V | 23mOhm @ 8A, 10V | 2V @ 250µA | 10nC @ 4.5V | ±12V | - | - | 1.31W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 6A 8-SOIC |
3.132 |
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LITTLE FOOT® | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta), 7.5A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | 2.5V @ 250µA | 13nC @ 10V | ±20V | 1040pF @ 15V | Schottky Diode (Isolated) | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Sanken |
MOSFET N-CH 75V 6A 8DFN |
2.538 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 6A (Ta) | 4.5V, 10V | 23.2mOhm @ 12.4A, 10V | 2.5V @ 350µA | 24nC @ 10V | ±20V | 1580pF @ 25V | - | 3.1W (Ta), 46W (Tc) | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 30V 12A 8-SOIC |
2.862 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 7.5mOhm @ 6A, 10V | 1V @ 250µA | 8nC @ 4.5V | +22V, -20V | 1290pF @ 25V | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 42A DFN |
6.408 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Ta), 85A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.2V @ 250µA | 47nC @ 10V | ±20V | 2200pF @ 15V | - | 6.2W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET N-CH 20V 8.3A 8-SOIC |
13.440 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 8.3A (Ta) | 2.5V, 4.5V | 20mOhm @ 11A, 4.5V | 700mV @ 250µA | 18.9nC @ 4.5V | ±12V | 1900pF @ 10V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 60V 3A SOT223 |
5.256 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4.5V, 10V | 125mOhm @ 2.2A, 10V | 1V @ 250µA | 17.7nC @ 10V | ±20V | 637pF @ 30V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A IPAK |
7.128 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 3.9mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET N-CH 30V 16A POWERDI333 |
5.850 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 45A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 42nC @ 10V | ±20V | 2000pF @ 15V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 60V MLFPAK |
4.086 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 9.9mOhm @ 15A, 10V | 4V @ 1mA | 30.1nC @ 10V | ±20V | 2007pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Nexperia |
MOSFET N-CH 30V 59A LFPAK |
2.628 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 9mOhm @ 25A, 10V | 2V @ 1mA | 16.5nC @ 5V | ±15V | 1614pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Nexperia |
MOSFET N-CH 80V 43A LFPAK33 |
5.526 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 43A (Tc) | 10V | 17mOhm @ 10A, 10V | 4V @ 1mA | 29.6nC @ 10V | ±20V | 2031pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Nexperia |
MOSFET N-CH 40V 42A DPAK |
4.698 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 16mOhm @ 10A, 10V | 2.8V @ 1mA | 22nC @ 10V | ±16V | 1170pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 47A DPAK |
8.820 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Tc) | 10V | 14mOhm @ 10A, 10V | 2.8V @ 1mA | 19.5nC @ 10V | ±16V | 1108pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 30A LFPAK |
2.646 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 30A (Tc) | 5V, 10V | 38mOhm @ 5A, 5V | 2.1V @ 1mA | 21.6nC @ 5V | ±10V | 2541pF @ 25V | - | 94.9W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 30V 14A 8-SOIC |
6.732 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 2.5V @ 250µA | 23nC @ 10V | ±20V | 846pF @ 15V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 60V 13A PWDI3333-8 |
7.704 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 60A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 2V @ 250µA | 50.4nC @ 10V | ±12V | 2713pF @ 30V | - | 2.2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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IXYS Integrated Circuits Division |
MOSFET N-CH 350V 5MA SOT-223 |
2.754 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 5mA (Ta) | -0.35V | 14Ohm @ 50mA, 350mV | - | - | ±20V | - | Depletion Mode | 2.5W (Ta) | -40°C ~ 85°C (TA) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 30V 12A |
4.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 9A, 10V | 3V @ 250µA | 14nC @ 10V | ±20V | 886pF @ 15V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 6-MICROFET |
7.884 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.8A (Ta) | 1.8V, 4.5V | 24mOhm @ 7.8A, 5V | 1.5V @ 250µA | 42nC @ 5V | ±8V | 2015pF @ 10V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
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STMicroelectronics |
MOSFET N-CH 30V 75A DPAK |
8.352 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 5.5mOhm @ 37.5A, 10V | 2.5V @ 250µA | 17nC @ 4.5V | ±20V | 1690pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |