Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 303/999
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 500V 14.5A TO-220FP |
18.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14.5A (Tc) | 10V | 280mOhm @ 7.5A, 10V | 4V @ 250µA | 66nC @ 10V | ±30V | 1162pF @ 100V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 100V 50A TO-220-3 |
20.124 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 15mOhm @ 50A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 1440pF @ 50V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 12A TO-220F |
19.080 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 540mOhm @ 6A, 10V | 5V @ 250µA | 39nC @ 10V | ±30V | 1930pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 800V 3A TO-220FP |
16.644 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5nC @ 10V | ±30V | 175pF @ 100V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 150V 35A TO-220AB |
12.708 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 5A (Ta), 35A (Tc) | 6V, 10V | 42mOhm @ 12A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 2150pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 40V 200A TO220-3 |
17.700 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 200A (Ta) | 4.5V, 10V | 1.7mOhm @ 100A, 10V | 2.3V @ 250µA | 75nC @ 4.5V | ±20V | 11400pF @ 20V | - | 250W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 74A TO-220 |
15.984 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 74A (Tc) | 10V | 12mOhm @ 74A, 10V | 4.5V @ 250µA | 86nC @ 10V | ±20V | 5605pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 1050V 1.5A TO-220AB |
6.588 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1050V | 1.5A (Tc) | 10V | 8Ohm @ 750mA, 10V | 5V @ 100µA | 10nC @ 10V | ±30V | 115pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 60V 38A |
6.516 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta) | 4V, 10V | 39mOhm @ 19A, 10V | - | 80nC @ 10V | ±20V | 4360pF @ 20V | - | 1.65W (Ta), 65W (Tc) | 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 200V 32A TO-3P |
8.406 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 32A (Tc) | 10V | 82mOhm @ 16A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2220pF @ 25V | - | 204W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 150V 45A TO-TO-220F |
19.260 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 45A (Tc) | 10V | 40mOhm @ 22.5A, 10V | 4V @ 250µA | 94nC @ 10V | ±30V | 3030pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 620V 8.4A I2PAK |
21.684 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 8.4A (Tc) | 10V | 750mOhm @ 4A, 10V | 4.5V @ 100µA | 42nC @ 10V | ±30V | 1250pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 800V 6.6A TO-220F |
18.720 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 6.6A (Tc) | 10V | 1.9Ohm @ 3.3A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1680pF @ 25V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO220FP-3 |
10.116 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18nC @ 10V | ±20V | 807pF @ 400V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
SUPERFET3 650V TO220F PKG |
23.004 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 4.5V @ 1.7mA | 33nC @ 10V | ±30V | 1350pF @ 400V | - | 144W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 7A TO220 |
22.188 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 620V 8.4A TO220 |
19.584 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 8.4A (Tc) | 10V | 750mOhm @ 4A, 10V | 4.5V @ 100µA | 42nC @ 10V | ±30V | 1250pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO-220AB |
8.652 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 525V 6A TO-220FP |
20.736 |
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SuperFREDmesh3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Tc) | 10V | 1.15Ohm @ 3A, 10V | 4.5V @ 50µA | 33nC @ 10V | ±30V | 870pF @ 50V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 40V TO-220 |
18.420 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 1.79mOhm @ 30A, 10V | 2.5V @ 250µA | 195nC @ 10V | ±20V | 10930pF @ 20V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
60V N-CHANNEL ALPHASGT TM |
17.748 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 33A (Ta), 140A (Tc) | 6V, 10V | 3.2mOhm @ 20A, 10V | 3.4V @ 250µA | 60nC @ 10V | ±20V | 2870pF @ 30V | - | 6.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 500V 5A TO262-3 |
17.904 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 620pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO-220 |
22.116 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Rohm Semiconductor |
RJ1P12BBD IS A POWER MOSFET WITH |
13.524 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 5.8mOhm @ 50A, 10V | 4V @ 2.5mA | 80nC @ 10V | ±20V | 4170pF @ 50V | - | 178W (Tc) | 150°C (TJ) | Surface Mount | LPTL | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
23.208 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 550mOhm @ 4A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 540pF @ 50V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CHAN 800V TO-220AB |
21.348 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44nC @ 10V | ±30V | 827pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V TO-220F-3 |
18.204 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 800mOhm @ 4.5A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1980pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 650V 6A TO220FP |
20.988 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 820pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N CH 600V 15A TO-220 |
19.644 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 260mOhm @ 7.5A, 10V | 3.5V @ 250µA | 62nC @ 10V | ±20V | 2500pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 950V 14A TO251 |
8.928 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 14A (Tc) | 10V | 450mOhm @ 7.2A, 10V | 3.5V @ 360µA | 35nC @ 10V | ±20V | 1053pF @ 400V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |