Transistoren - Bipolar (BJT) - Single

Hersteller

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Serie

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Transistortyp

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Strom - Kollektor (Ic) (max.)

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Spannung - Kollektor-Emitter-Durchschlag (max.)

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Vce-Sättigung (Max) @ Ib, Ic

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Strom - Kollektorabschaltung (max.)

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Gleichstromverstärkung (hFE) (min) @ Ic, Vce

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Leistung - max

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Frequenz - Übergang

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Betriebstemperatur

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Montagetyp

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Paket / Fall

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Lieferantengerätepaket

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Single

Datensätze 13.715

Seite 427/458

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Transistortyp	Strom - Kollektor (Ic) (max.)	Spannung - Kollektor-Emitter-Durchschlag (max.)	Vce-Sättigung (Max) @ Ib, Ic	Strom - Kollektorabschaltung (max.)	Gleichstromverstärkung (hFE) (min) @ Ic, Vce	Leistung - max	Frequenz - Übergang	Betriebstemperatur	Montagetyp	Paket / Fall	Lieferantengerätepaket
2SC2235-Y(6MBH1,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	8.172	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(DNSO,AF)	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	2.304	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(MBSH1,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	3.834	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6CANOFM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	3.006	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6CN,A,F	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	2.538	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6FJT,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	7.812	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6FJT,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	3.456	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6KMATFM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	6.300	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6ND,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	5.958	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y(T6OMI,FM	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	2.358	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,F(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	8.604	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,T6ASHF(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	2.268	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	3.402	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,T6KEHF(M	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	4.032	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,T6USNF(M	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	5.004	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2235-Y,USNHF(M	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3	4.320	-	NPN	800mA	120V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	900mW	120MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2383-O(T6OMI,FM	Toshiba Semiconductor and Storage	TRANS NPN 1A 160V TO226-3	5.382	-	NPN	1A	160V	1.5V @ 50mA, 500mA	1µA (ICBO)	60 @ 200mA, 5V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2383-O,T6ALPF(M	Toshiba Semiconductor and Storage	TRANS NPN 1A 160V TO226-3	5.832	-	NPN	1A	160V	1.5V @ 50mA, 500mA	1µA (ICBO)	60 @ 200mA, 5V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2383-Y(T6DNS,FM	Toshiba Semiconductor and Storage	TRANS NPN 1A 160V TO226-3	6.048	-	NPN	1A	160V	1.5V @ 50mA, 500mA	1µA (ICBO)	60 @ 200mA, 5V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2383-Y,T6KEHF(M	Toshiba Semiconductor and Storage	TRANS NPN 1A 160V TO226-3	8.190	-	NPN	1A	160V	1.5V @ 50mA, 500mA	1µA (ICBO)	60 @ 200mA, 5V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2482(FJTN,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 100MA 300V TO226-3	5.382	-	NPN	100mA	300V	1V @ 1mA, 10mA	1µA (ICBO)	30 @ 20mA, 10V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2482(T6TOJS,F,M	Toshiba Semiconductor and Storage	TRANS NPN 100MA 300V TO226-3	7.434	-	NPN	100mA	300V	1V @ 1mA, 10mA	1µA (ICBO)	30 @ 20mA, 10V	900mW	50MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-O(ND1,AF)	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3	4.284	-	NPN	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-O(ND2,AF)	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3	8.172	-	NPN	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3	8.496	-	NPN	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-O,F(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3	3.780	-	NPN	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(6MBH1,AF	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3	5.076	-	NPN	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(HIT,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3	2.628	-	NPN	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(T6CANOFM	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3	7.092	-	NPN	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD
2SC2655-Y(T6CN,A,F	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3	3.240	-	NPN	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	900mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92MOD

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