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Transistoren - Bipolar (BJT) - Einfach, vorgespannt

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Einfach, vorgespannt
Datensätze 3.282
Seite 87/110
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Transistortyp
Strom - Kollektor (Ic) (max.)
Spannung - Kollektor-Emitter-Durchschlag (max.)
Widerstand - Basis (R1)
Widerstand - Emitterbasis (R2)
Gleichstromverstärkung (hFE) (min) @ Ic, Vce
Vce-Sättigung (Max) @ Ib, Ic
Strom - Kollektorabschaltung (max.)
Frequenz - Übergang
Leistung - max
Montagetyp
Paket / Fall
Lieferantengerätepaket
FJN4303RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
6.480
-
PNP - Pre-Biased
100mA
50V
22 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4307RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
8.172
-
PNP - Pre-Biased
100mA
50V
22 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4306RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
8.046
-
PNP - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3306RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
6.804
-
NPN - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN4305RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
4.986
-
PNP - Pre-Biased
100mA
50V
4.7 kOhms
10 kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4301RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
7.902
-
PNP - Pre-Biased
100mA
50V
4.7 kOhms
4.7 kOhms
20 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4304RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
3.906
-
PNP - Pre-Biased
100mA
50V
47 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJV3106RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
5.850
-
NPN - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3112RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
5.814
-
NPN - Pre-Biased
100mA
40V
47 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3111RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
3.222
-
NPN - Pre-Biased
100mA
40V
22 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3109RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
4.680
-
NPN - Pre-Biased
100mA
40V
4.7 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3107RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
2.538
-
NPN - Pre-Biased
100mA
50V
22 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3108RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
4.788
-
NPN - Pre-Biased
100mA
50V
47 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJNS3208RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
3.996
-
NPN - Pre-Biased
100mA
50V
47 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3206RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
3.222
-
NPN - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3211RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
2.160
-
NPN - Pre-Biased
100mA
40V
22 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3215RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
6.858
-
NPN - Pre-Biased
100mA
50V
2.2 kOhms
10 kOhms
33 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3202RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
3.024
-
NPN - Pre-Biased
100mA
50V
10 kOhms
10 kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3215RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
5.238
-
NPN - Pre-Biased
100mA
50V
2.2 kOhms
10 kOhms
33 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3210RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
7.452
-
NPN - Pre-Biased
100mA
40V
10 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3212RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
2.844
-
NPN - Pre-Biased
100mA
40V
47 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3209RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
6.714
-
NPN - Pre-Biased
100mA
40V
4.7 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3204RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
2.196
-
NPN - Pre-Biased
100mA
50V
47 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3205RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
6.624
-
NPN - Pre-Biased
100mA
50V
4.7 kOhms
10 kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3201RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
3.078
-
NPN - Pre-Biased
100mA
50V
4.7 kOhms
4.7 kOhms
20 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3213RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
3.490
-
NPN - Pre-Biased
100mA
50V
2.2 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3201RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
8.028
-
NPN - Pre-Biased
100mA
50V
4.7 kOhms
4.7 kOhms
20 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3202RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
7.038
-
NPN - Pre-Biased
100mA
50V
10 kOhms
10 kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3204RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
4.356
-
NPN - Pre-Biased
100mA
50V
47 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3214RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
3.996
-
NPN - Pre-Biased
100mA
50V
4.7 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S