Transistoren - Bipolar (BJT) - Einfach, vorgespannt
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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Einfach, vorgespannt
Datensätze 3.282
Seite 52/110
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Transistortyp | Strom - Kollektor (Ic) (max.) | Spannung - Kollektor-Emitter-Durchschlag (max.) | Widerstand - Basis (R1) | Widerstand - Emitterbasis (R2) | Gleichstromverstärkung (hFE) (min) @ Ic, Vce | Vce-Sättigung (Max) @ Ib, Ic | Strom - Kollektorabschaltung (max.) | Frequenz - Übergang | Leistung - max | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN |
6.984 |
|
- | NPN - Pre-Biased | 100mA | 50V | 22 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | - | 150mW | Surface Mount | SOT-723 | VESM |
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Rohm Semiconductor |
DTD123YCHZG IS THE HIGH RELIABIL |
7.938 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Rohm Semiconductor |
DIGITAL TRANSISTOR PNP 50V 100MA |
4.806 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
TRANSISTOR NPN BRT Q1BSR22KOHM Q |
2.772 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Toshiba Semiconductor and Storage |
NPN BRT Q1BSR2.2KOHM Q1BER10KOHM |
4.158 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
NPN BRT Q1BSR10KOHM Q1BER4.7KOHM |
3.526 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
NPN BRT Q1BSR47KOHM Q1BER10KOHM |
5.868 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR22KOHM Q |
8.496 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR4.7KOHM |
7.596 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR10KOHM Q1BERINFINIT |
7.236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR4.7KOHM Q1BER10KOHM |
5.886 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BER10KOHM |
5.328 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Rohm Semiconductor |
DTA123EU3 IS AN DIGITAL TRANSIST |
6.516 |
|
- | PNP - Pre-Biased | 100mA | 50V | 2.2 kOhms | 2.2 kOhms | 20 @ 20mA, 5V | 300mV @ 500µA, 10mA | - | 250MHz | 200mW | Surface Mount | SC-70, SOT-323 | UMT3 |
|
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|
Toshiba Semiconductor and Storage |
TRANSISTOR NPN BRT Q1BSR4.7KOHM |
6.318 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR22KOHM Q1BER22KOHM |
4.806 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BER47KOHM |
3.598 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR2.2KOHM Q1BER47KOHM |
6.228 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR4.7KOHM Q1BER47KOHM |
8.910 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
PNP BRT Q1BSR22KOHM Q1BER47KOHM |
2.304 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BER22KOHM |
3.240 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
PNP BRT Q1BSR47KOHM Q1BERINFINIT |
6.534 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Rohm Semiconductor |
DTB113ECHZG IS THE HIGH RELIABIL |
7.866 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micro Commercial Co |
TRANS PREBIAS NPN 200MW SOT23 |
5.976 |
|
- | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
|
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Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR0.47KOHM |
8.208 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Toshiba Semiconductor and Storage |
TRANSISTOR PNP BRT Q1BSR1KOHM Q1 |
8.406 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
ON Semiconductor |
TRANS PREBIAS PNP 0.246W SOT-23 |
4.230 |
|
- | PNP - Pre-Biased | 100mA | 50V | 4.7 kOhms | - | 160 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
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ON Semiconductor |
TRANS PREBIAS PNP 246MW SOT23-3 |
7.254 |
|
- | PNP - Pre-Biased | 100mA | 50V | 10 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
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|
ON Semiconductor |
TRANS PREBIAS PNP 202MW SC70-3 |
4.590 |
|
- | PNP - Pre-Biased | 100mA | 50V | 1 kOhms | 1 kOhms | 3 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
|
|
|
ON Semiconductor |
TRANS PREBIAS PNP 202MW SC70-3 |
5.940 |
|
- | PNP - Pre-Biased | 100mA | 50V | 22 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
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|
ON Semiconductor |
TRANS PREBIAS NPN 338MW SC59 |
3.580 |
|
- | NPN - Pre-Biased | 100mA | 50V | 47 kOhms | 22 kOhms | 80 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 338mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 |