PMIC - Gate-Treiber
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KategorieHalbleiter / Energieverwaltungs-ICs / PMIC - Gate-Treiber
Datensätze 5.436
Seite 172/182
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Angetriebene Konfiguration | Kanaltyp | Anzahl der Treiber | Gate-Typ | Spannung - Versorgung | Logikspannung - VIL, VIH | Strom - Spitzenleistung (Quelle, Senke) | Eingabetyp | High Side Voltage - Max (Bootstrap) | Anstiegs- / Abfallzeit (Typ) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microchip Technology |
MOSFET DRVR 4.5A DUAL HS 16SOIC |
3.472 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4A, 4A | Non-Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Microchip Technology |
MOSFET DRVR 4.5A DUAL HS 16SOIC |
6.840 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4A, 4A | Inverting, Non-Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Microchip Technology |
MOSFET DRVR 4.5A DUAL HS 16SOIC |
4.374 |
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- | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 4A, 4A | Inverting, Non-Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Richtek USA Inc. |
IC FET DVR 1CH SYNC BUCK 8WDFN |
7.416 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 13.2V | 0.7V, 3.2V | - | Inverting, Non-Inverting | 15V | 25ns, 12ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-WDFN (3x3) |
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Rohm Semiconductor |
1 CHANNEL GATE DRIVER 20-PIN SSO |
5.364 |
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- | Low-Side | - | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 ~ 5.5V | - | - | Inverting, Non-Inverting | - | 50ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 20-LSSOP (0.240", 6.10mm Width) | 20-SSOP-B |
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Infineon Technologies |
IC GATE DRVR HI/LOW SIDE 10DFN |
4.590 |
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- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.8V, 1V | 2A, 2A | Non-Inverting | 35V | 10ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Infineon Technologies |
IC GATE DRVR HI/LOW SIDE 10DFN |
7.110 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 0.8V, 1V | 2A, 2A | Non-Inverting | 35V | 10ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Microchip Technology |
IC MOSFET DVR 3A L-SIDE 8SOIC |
7.218 |
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Automotive, AEC-Q100 | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 20V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Microchip Technology |
IC MOSFET DVR 3A L-SIDE 8SOIC |
3.924 |
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Automotive, AEC-Q100 | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 20V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC DRIVER MOSFET 6A HS 8-SOIC |
8.478 |
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- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC DRIVER DUAL MOSFET 1.5A 8SOIC |
7.650 |
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- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRV SGL 6A HS 8-SOIC |
2.772 |
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- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRV SGL 6A HS 8-SOIC |
5.004 |
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- | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRIVER 6-TDFN |
7.542 |
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- | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 12.6V | - | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRIVER HS SOT23-6 |
6.120 |
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- | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 12.6V | - | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC MOSFET DRIVER 6-TDFN |
7.488 |
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- | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 12.6V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DVR HIGH SPEED SOT23-6 |
3.492 |
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- | Low-Side | Single | 1 | N-Channel MOSFET | 4V ~ 12.6V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-TDFN |
8.514 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | - | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-TDFN |
8.280 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
5.364 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
5.868 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
1.418 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
3.906 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
2.322 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DVR 4A 20NS DUAL 8SOIC |
7.020 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
8.334 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
2.358 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
8.028 |
|
- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
4.572 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
6.012 |
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- | Low-Side | Independent | 2 | N-Channel MOSFET | 4V ~ 15V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |