PMIC - Gate-Treiber
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KategorieHalbleiter / Energieverwaltungs-ICs / PMIC - Gate-Treiber
Datensätze 5.436
Seite 112/182
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Angetriebene Konfiguration | Kanaltyp | Anzahl der Treiber | Gate-Typ | Spannung - Versorgung | Logikspannung - VIL, VIH | Strom - Spitzenleistung (Quelle, Senke) | Eingabetyp | High Side Voltage - Max (Bootstrap) | Anstiegs- / Abfallzeit (Typ) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Maxim Integrated |
IC DVR MOSFET QUAD HI-SIDE 18DIP |
5.454 |
|
- | High-Side | Independent | 4 | N-Channel MOSFET | 4.5V ~ 16.5V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | 0°C ~ 70°C (TA) | Through Hole | 18-DIP (0.300", 7.62mm) | 18-PDIP |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-DIP |
7.668 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 90ns, 40ns | 125°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
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|
IXYS |
IC LOW SIDE DRIVER 16DIP |
8.424 |
|
ISOSMART™ | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 10V ~ 20V | 1V, 3.65V | 2A, 2A | Non-Inverting | 1200V | 15ns, 15ns | -40°C ~ 150°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-DIP |
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|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-DIP |
4.896 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-DIP |
3.816 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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|
Infineon Technologies |
IC DRIVER HIGH/LOW DRIVER 8-DIP |
3.204 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Infineon Technologies |
IC DRIVER HALF BRIDGE 8DIP |
2.682 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP |
5.922 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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|
Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-DIP |
6.012 |
|
- | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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|
Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 14-DIP |
5.940 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
|
|
Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 14-DIP |
6.084 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 3.3V ~ 20V | 6V, 9.5V | 2A, 2A | Non-Inverting | 600V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Infineon Technologies |
IC MOSFET DRIVER SGL-CH 8-DIP |
8.622 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10V ~ 20V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC MOSFET DRIVER LIMITING 8-DIP |
3.090 |
|
- | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 0V ~ 18V | 0.8V, 2.2V | 1.6A, 3.3A | Non-Inverting | 500V | 43ns, 26ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Infineon Technologies |
IC MOSFET DRIVER CUR-SENSE 8-DIP |
6.228 |
|
- | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V ~ 20V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-DIP |
79.249 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 80ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
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|
Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 44-PLCC |
8.100 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
|
|
Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 28-DIP |
4.794 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-PDIP |
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Infineon Technologies |
IC DRVR HALF BRDG SELF-OSC 8-DIP |
8.604 |
|
- | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 10V ~ 15.6V | - | - | RC Input Circuit | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 44-PLCC |
4.302 |
|
- | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
|
|
Linear Technology/Analog Devices |
IC ISOLATED MOSFET DRIVER 18DIP |
3.744 |
|
- | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Through Hole | 18-DIP (0.300", 7.62mm) | 18-DIP |
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|
Linear Technology/Analog Devices |
5V ISOLATED HI SIDE DX UL RECOG. |
6.876 |
|
- | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Through Hole | 18-DIP (0.300", 7.62mm) | 18-DIP |
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Linear Technology/Analog Devices |
IC MOSFET DVR ISOLATD 12V 28SOIC |
2.592 |
|
- | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
Linear Technology/Analog Devices |
IC MOSFET DVR ISOLATD 5V 28-SOIC |
6.786 |
|
- | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
Linear Technology/Analog Devices |
12V ISOLATED HI SIDE DRIVER UL R |
7.596 |
|
- | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Through Hole | 18-DIP (0.300", 7.62mm) | 18-DIP |
|
|
Linear Technology/Analog Devices |
5V ISOLATED HI SIDE DX UL RECOG. |
6.588 |
|
- | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Through Hole | 18-DIP (0.300", 7.62mm) | 18-DIP |
|
|
Linear Technology/Analog Devices |
IC MOSFET DVR ISOLATD 12V 28SOIC |
5.472 |
|
- | High-Side | - | 1 | - | 11.4V ~ 12.6V | - | - | Non-Inverting | - | - | - | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
Linear Technology/Analog Devices |
IC MOSFET DVR ISOLATD 5V 28-SOIC |
8.730 |
|
- | High-Side | - | 1 | - | 4.75V ~ 5.25V | - | - | Non-Inverting | - | - | - | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
|
|
Linear Technology/Analog Devices |
IC MOSFET DVR HI-SIDE DUAL 8-DIP |
6.426 |
|
- | High-Side | Independent | 2 | N-Channel MOSFET | 9V ~ 24V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC DVR MOSFET DUAL NON-INV 8SOIC |
21.927 |
|
- | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-SOIC |
2.034 |
|
- | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10V ~ 20V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |