Speicher
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KategorieHalbleiter / Speicher-ICs / Speicher
Datensätze 46.590
Seite 543/1553
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Speichertyp | Speicherformat | Technologie | Speichergröße | Speicherschnittstelle | Taktfrequenz | Schreibzykluszeit - Wort, Seite | Zugriffszeit | Spannung - Versorgung | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Micron Technology Inc. |
IC RAM 8G PARALLEL 1.5GHZ FBGA |
6.048 |
|
- | Volatile | RAM | SGRAM - GDDR6 | 8Gb (256M x 32) | Parallel | 1.5GHz | - | - | 1.31V ~ 1.39V | 0°C ~ 95°C (TC) | Sub-Base Mount | 180-TFBGA | 180-FBGA (12x14) |
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Cypress Semiconductor |
IC FLASH 32M PARALLEL 56MHZ |
8.892 |
|
CD-J | Non-Volatile | FLASH | FLASH - NOR | 32Mb (1M x 32) | Parallel | 56MHz | 60ns | 54ns | 1.65V ~ 2.75V | -40°C ~ 85°C (TA) | Surface Mount | 80-BQFP | 80-PQFP (20x20) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 86TSOP II |
5.346 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
6.804 |
|
- | Volatile | DRAM | SDRAM | 512Mb (64M x 8) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
8.658 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 105°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x10) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 84TWBGA |
3.436 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 2Gb (128M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
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|
Alliance Memory, Inc. |
IC SRAM 18M PARALLEL 100TQFP |
6.912 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (1M x 18) | Parallel | 166MHz | 6ns | 3.5ns | 2.3V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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Alliance Memory, Inc. |
IC SRAM 18M PARALLEL 100TQFP |
2.610 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 18Mb (512K x 36) | Parallel | 166MHz | 6ns | 3.5ns | 2.3V ~ 2.6V | 0°C ~ 70°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
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|
Micron Technology Inc. |
IC FLASH RAM 4G PARALLEL MCP |
2.322 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 78TWBGA |
6.714 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 4Gb (512M x 8) | Parallel | 667MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (9x10.5) |
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IDT, Integrated Device Technology |
IC SRAM 8K PARALLEL 64TQFP |
7.740 |
|
- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 20ns | 20ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 64-LQFP | 64-TQFP (14x14) |
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|
Micron Technology Inc. |
TLC 256G 32GX8 VBGA |
8.604 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Cypress Semiconductor |
IC FLASH 1G PARALLEL |
4.266 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (64M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
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Micron Technology Inc. |
IC RAM 8G PARALLEL 1.5GHZ FBGA |
8.190 |
|
- | Volatile | RAM | SGRAM - GDDR6 | 8Gb (256M x 32) | Parallel | 1.5GHz | - | - | 1.31V ~ 1.39V | 0°C ~ 95°C (TC) | Sub-Base Mount | 180-TFBGA | 180-FBGA (12x14) |
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Cypress Semiconductor |
IC SRAM 9M PARALLEL 100TQFP |
7.002 |
|
NoBL™ | Volatile | SRAM | SRAM - Synchronous, SDR | 9Mb (512K x 18) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
5.688 |
|
- | Volatile | DRAM | SDRAM | 512Mb (64M x 8) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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|
Micron Technology Inc. |
IC FLASH RAM 4G PARALLEL 533MHZ |
6.030 |
|
Automotive, AEC-Q100 | Non-Volatile | FLASH, RAM | FLASH - NAND, Mobile LPDRAM | 4Gb (512M x 8)(NAND), 8Gb (512M x 16)(LPDDR2) | Parallel | 533MHz | - | - | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Surface Mount | 162-VFBGA | 162-VFBGA (10.5x8) |
|
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Micron Technology Inc. |
IC FLASH RAM 4G PARALLEL MCP |
5.544 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Cypress Semiconductor |
IC FLASH 1G SPI 80MHZ 16SO |
5.436 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI - Quad I/O | 66MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Cypress Semiconductor |
IC FLASH 1G SPI 133MHZ |
7.020 |
|
FS-S | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI - Quad I/O | 133MHz | - | - | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Micron Technology Inc. |
IC FLASH 64G MMC |
4.140 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | - | -40°C ~ 105°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
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Micron Technology Inc. |
IC FLASH 64G MMC |
8.406 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | MMC | - | - | - | - | -40°C ~ 105°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
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Micron Technology Inc. |
IC FLASH 64G PARALLEL WAFER |
5.256 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | - | - | - |
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Micron Technology Inc. |
IC FLASH 64G PARALLEL DIE |
7.866 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 64Gb (8G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | - | - | - |
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Micron Technology Inc. |
IC FLASH MLC 64G DIE 8GX8 |
7.920 |
|
- | Non-Volatile | FLASH | FLASH - NAND (MLC) | 64Gb (8G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | - | - | - |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
2.430 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP |
3.580 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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|
Micron Technology Inc. |
IC FLASH RAM 4G PARALLEL 533MHZ |
8.082 |
|
Automotive, AEC-Q100 | Non-Volatile | FLASH, RAM | FLASH - NAND, Mobile LPDRAM | 4Gb (512M x 8)(NAND), 8Gb (512M x 16)(LPDDR2) | Parallel | 533MHz | - | - | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Surface Mount | 162-VFBGA | 162-VFBGA (10.5x8) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
7.740 |
|
- | Volatile | DRAM | SDRAM | 512Mb (32M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x13) |
|
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Micron Technology Inc. |
IC FLASH NAND 128G PARALLEL |
7.452 |
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