Speicher
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KategorieHalbleiter / Speicher-ICs / Speicher
Datensätze 46.590
Seite 50/1553
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Speichertyp | Speicherformat | Technologie | Speichergröße | Speicherschnittstelle | Taktfrequenz | Schreibzykluszeit - Wort, Seite | Zugriffszeit | Spannung - Versorgung | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
9.540 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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Alliance Memory, Inc. |
IC DRAM 512M PARALLEL 54TSOP |
17.172 |
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- | Volatile | DRAM | SDRAM | 512Mb (64M x 8) | Parallel | 133MHz | 15ns | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
8.910 |
|
- | Volatile | DRAM | SDRAM | 512Mb (16M x 32) | Parallel | 167MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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Maxim Integrated |
IC NVSRAM 64K PARALLEL 28EDIP |
19.573 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 64Kb (8K x 8) | Parallel | - | 150ns | 150ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-EDIP |
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Cypress Semiconductor |
IC FRAM 256K PARALLEL 28SOIC |
24.237 |
|
F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 256Kb (32K x 8) | Parallel | - | 130ns | - | 2.7V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Cypress Semiconductor |
IC NVSRAM 256K PARALLEL 32SOIC |
5.503 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 45ns | 45ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.295", 7.50mm Width) | 32-SOIC |
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Cypress Semiconductor |
IC SRAM 16M PARALLEL 48TSOP I |
7.759 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 55ns | 55ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Micron Technology Inc. |
IC DRAM 4G PARALLEL 96FBGA |
16.656 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.6GHz | 15ns | 19ns | 1.14V ~ 1.26V | -40°C ~ 125°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (7.5x13.5) |
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Maxim Integrated |
IC NVSRAM 256K PARALLEL 28EDIP |
6.732 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 100ns | 100ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-EDIP |
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Maxim Integrated |
IC NVSRAM 256K PARALLEL 28EDIP |
6.012 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 70ns | 70ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole | 28-DIP Module (0.600", 15.24mm) | 28-EDIP |
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Everspin Technologies Inc. |
IC RAM 4M PARALLEL 48FBGA |
1.160 |
|
- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 4Mb (256K x 16) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-LFBGA | 48-FBGA (8x8) |
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Everspin Technologies Inc. |
IC RAM 4M PARALLEL 48FBGA |
20.004 |
|
- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 4Mb (512K x 8) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-LFBGA | 48-FBGA (8x8) |
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Alliance Memory, Inc. |
IC DRAM 1G PARALLEL 66TSOP II |
6.852 |
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- | Volatile | DRAM | SDRAM - DDR | 1Gb (64M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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Macronix |
SERIAL NOR |
7.380 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 2Gb (256M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 60µs, 1.5ms | - | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 24-LBGA, CSPBGA | 24-CSPBGA (6x8) |
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Swissbit |
IC FLASH 128GBIT EMMC 153LFBGA |
7.680 |
|
EM-20 | Non-Volatile | FLASH | FLASH - NAND (MLC) | 128Gb (16G x 8) | eMMC | 400MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C | Surface Mount | 153-LFBGA | 153-LFBGA (11.5x13) |
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Cypress Semiconductor |
IC NVSRAM 1M PARALLEL 48SSOP |
9.060 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 45ns | 45ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-BSSOP (0.295", 7.50mm Width) | 48-SSOP |
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Everspin Technologies Inc. |
IC RAM 16M PARALLEL 44TSOP2 |
7.584 |
|
- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 16Mb (2M x 8) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
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Cypress Semiconductor |
IC SRAM 18M PARALLEL 165FBGA |
8.279 |
|
- | Volatile | SRAM | SRAM - Synchronous, QDR II | 18Mb (1M x 18) | Parallel | 250MHz | - | - | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 165-LBGA | 165-FBGA (13x15) |
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Maxim Integrated |
IC NVSRAM 1M PARALLEL 32EDIP |
966 |
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- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 70ns | 70ns | 4.75V ~ 5.25V | 0°C ~ 70°C (TA) | Through Hole | 32-DIP Module (0.600", 15.24mm) | 32-EDIP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 8G PARALLEL 96LFBGA |
281 |
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- | Volatile | DRAM | SDRAM - DDR3L | 8Gb (512M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-LFBGA | 96-LFBGA (10x14) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 8G PARALLEL 96LFBGA |
7.392 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 8Gb (512M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-LFBGA | 96-LFBGA (10x14) |
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Cypress Semiconductor |
IC NVSRAM 4M PARALLEL 44TSOP II |
8.712 |
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- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 4Mb (256K x 16) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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Toshiba Memory America, Inc. |
IC FLASH 512G UFS 153VFBGA |
7.632 |
|
Consumer UFS | Non-Volatile | FLASH | FLASH - NAND | 512Gb (64G x 8) | UFS | - | - | - | 2.7V ~ 3.6V | -25°C ~ 85°C (TC) | Surface Mount | 153-VFBGA | 153-VFBGA (11.5x13) |
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Cypress Semiconductor |
IC SRAM 16M PARALLEL 48VFBGA |
5.979 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (2M x 8) | Parallel | - | 10ns | 10ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
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Micron Technology Inc. |
IC FLASH 32G PARALLEL 100VBGA |
13.434 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | Parallel | 100MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-VFBGA | 100-VBGA (12x18) |
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Everspin Technologies Inc. |
IC RAM 16M PARALLEL 48FBGA |
6.606 |
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- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 16Mb (2M x 8) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-LFBGA | 48-FBGA (10x10) |
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Cypress Semiconductor |
IC SRAM 32M PARALLEL 48FBGA |
27.573 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 32Mb (4M x 8, 2M x 16) | Parallel | - | 55ns | 55ns | 2.2V ~ 3.7V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFBGA | 48-FBGA (8x9.5) |
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IDT, Integrated Device Technology |
IC SRAM 256K PARALLEL 84PLCC |
6.102 |
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- | Volatile | SRAM | SRAM - Dual Port, Asynchronous | 256Kb (16K x 16) | Parallel | - | 15ns | 15ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | Surface Mount | 84-LCC (J-Lead) | 84-PLCC (29.31x29.31) |
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Microchip Technology |
IC EEPROM 1M PARALLEL 32PLCC |
372 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Mb (128K x 8) | Parallel | - | 10ms | 120ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (13.97x11.43) |
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Cypress Semiconductor |
IC NVSRAM 8M PARALLEL 54TSOP |
7.470 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 8Mb (512K x 16) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |