Speicher
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KategorieHalbleiter / Speicher-ICs / Speicher
Datensätze 46.590
Seite 490/1553
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Speichertyp | Speicherformat | Technologie | Speichergröße | Speicherschnittstelle | Taktfrequenz | Schreibzykluszeit - Wort, Seite | Zugriffszeit | Spannung - Versorgung | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
2.772 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (256K x 18) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA |
6.192 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (128M x 8) | Parallel | 933MHz | 15ns | 20ns | 1.425V ~ 1.575V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 78TWBGA |
5.328 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 1Gb (128M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-TWBGA (8x10.5) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
8.352 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
4.716 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 200MHZ |
5.364 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TFBGA | 165-TFBGA (13x15) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
6.102 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
6.660 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
2.250 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 120ns | 1.65V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
5.832 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 120ns | 1.65V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Micron Technology Inc. |
IC FLASH 1G PARALLEL 56TSOP |
6.804 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8, 64M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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Micron Technology Inc. |
IC FLASH 1G PARALLEL 56TSOP |
6.804 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8, 64M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
6.696 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 100MHz | - | 5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
5.148 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
6.138 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
3.186 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
3.562 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
6.516 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 183MHz | - | 3.3ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
8.946 |
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- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 183MHz | - | 3.3ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
8.406 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
4.932 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
7.488 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA |
5.868 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (8x13) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL |
2.952 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 120ns | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL |
3.508 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 120ns | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL |
3.978 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 130ns | 1.65V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL |
2.682 |
|
GL-T | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | Parallel | - | 60ns | 130ns | 1.65V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Micron Technology Inc. |
IC FLASH 4G PARALLEL TSOP |
6.516 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 4Gb (256M x 16) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
5.706 |
|
- | Volatile | DRAM | SDRAM | 256Mb (32M x 8) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 166MHZ |
3.312 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |