Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 996/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V TO-220AC |
7.614 |
|
Automotive, AEC-Q101, TMBS® | Schottky | 60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 8KV 50MA AXIAL |
5.472 |
|
- | Silicon Carbide Schottky | 8000V | 50mA (DC) | 4.6V @ 50mA | No Recovery Time > 500mA (Io) | 0ns | 3.8µA @ 8000V | 25pF @ 1V, 1MHz | Through Hole | Axial | - | -55°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 200V 5A SMC |
4.788 |
|
- | Standard | 200V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 1µA @ 600V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A SMF |
3.708 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 100V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 100V | - | Surface Mount | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A SMF |
6.858 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 200V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 200V | - | Surface Mount | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A SMF |
4.032 |
|
FRED Pt® | Standard | 100V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 100V | - | Surface Mount | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A SMF |
6.714 |
|
FRED Pt® | Standard | 200V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 200V | - | Surface Mount | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
|
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Central Semiconductor Corp |
DIODE GEN PURP 75V 50MA DO7 |
7.362 |
|
- | Standard | 75V | 50mA | 1V @ 5mA | Small Signal =< 200mA (Io), Any Speed | - | 500µA @ 50V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -55°C ~ 75°C |
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Global Power Technologies Group |
DIODE SCHOTT 1.2KV 60A TO247-2 |
7.308 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 60A (DC) | 1.7V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3581pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 30A TO247-2 |
7.380 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 30A (DC) | 1.65V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 1581pF @ 1V, 1MHZ | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 50A TO247-2 |
4.860 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 50A (DC) | 1.65V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 600V | 2635pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO247-2 |
4.014 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3174pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 17.5A TO252 |
2.322 |
|
Zero Recovery™ | Silicon Carbide Schottky | 1200V | 17.5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 455pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A TO252-2 |
6.354 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 122pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO220-2 |
2.250 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 243pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO263-2 |
3.888 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 243pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 8A TO220-2 |
5.472 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 477pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO220-2 |
6.732 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 487pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO263-2 |
4.482 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 487pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 15A TO220-2 |
2.034 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.7V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 895pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1200V 15A TO247-2 |
3.582 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.7V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 895pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 24A TO247-2 |
2.016 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 24A (DC) | 1.7V @ 24A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 973pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1200V 81A TO247-2 |
8.622 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 81A | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 1790pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 30A TO247-2 |
7.002 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 1790pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 36A TO247-2 |
4.482 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 36A (DC) | 1.7V @ 36A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 1460pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO247-2 |
7.146 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.7V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 2984pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTT 1.2KV 60A TO247-2 |
7.614 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 60A (DC) | 1.7V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3581pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 5A TO220-2 |
5.706 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 317pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 5A DPAK-2 |
3.168 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 5A | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 317pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1700V 5A TO247-2 |
4.860 |
|
Amp+™ | Silicon Carbide Schottky | 1700V | 5A (DC) | 1.75V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1700V | 406pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |