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Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 99/1165
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Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
ACGRAT103L-HF
Comchip Technology
DIODE GEN PURP 600V 1A 2010
21.984
Automotive, AEC-Q101
Standard
600V
1A
930mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 600V
8.2pF @ 4V, 1MHz
Surface Mount
2010 (5025 Metric)
2010
-65°C ~ 175°C
BYM11-600-E3/97
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO213AB
50.382
SUPERECTIFIER®
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
GL41A-E3/97
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 1A DO213AB
273.546
SUPERECTIFIER®
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
SB3100TA
SMC Diode Solutions
DIODE SCHOTTKY 100V DO201AD
109.086
-
Schottky
100V
-
790mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
250pF @ 5V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SS215LW RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SOD123W
86.892
-
Schottky
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 150V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
SE10PD-M3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO220AA
70.506
eSMP®
Standard
200V
1A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
780ns
5µA @ 200V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
SE10PB-M3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO220AA
42.852
eSMP®
Standard
100V
1A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
780ns
5µA @ 100V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
ES1BL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
52.830
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS110E-TP
Micro Commercial Co
DIODE SCHOTTKY 100V 1A SMAE
85.926
-
Schottky
100V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMAE
-55°C ~ 150°C
SK35A-LTP
Micro Commercial Co
DIODE SCHOTTKY 50V 3A DO214AC
39.054
-
Schottky
50V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
250pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (HSMA)
-50°C ~ 125°C
SS110-LTP
Micro Commercial Co
DIODE SCHOTTKY 1A 100V SMA
45.384
-
Schottky
100V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
US2JA-TP
Micro Commercial Co
DIODE GEN PURP 600V 2A DO214AC
43.224
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
28pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-50°C ~ 150°C
SK34TR
SMC Diode Solutions
DIODE SCHOTTKY 40V 3A SMC
22.722
-
Schottky
40V
3A
630mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 40V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
BYG20G R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO214AC
138.720
-
Standard
400V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 400V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK24A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 2A DO214AC
117.126
-
Schottky
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SK26A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 2A DO214AC
32.760
-
Schottky
60V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
HS2MA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1.5A DO214AC
49.212
-
Standard
1000V
1.5A
1.7V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2MA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1.5A DO214AC
19.644
-
Standard
1000V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
PMEG3010BER,115
Nexperia
DIODE SCHOTTKY 30V 1A SOD123W
533.304
-
Schottky
30V
1A
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 30V
170pF @ 1V, 1MHz
Surface Mount
SOD-123W
CFP3
150°C (Max)
CDBMT1100-HF
Comchip Technology
DIODE SCHOTTKY 100V 1A SOD123H
348.876
-
Schottky
100V
1A (DC)
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
120pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123H
-55°C ~ 150°C
BAS16LP-7
Diodes Incorporated
DIODE GEN PURP 75V 200MA 2DFN
269.232
-
Standard
75V
200mA
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
0402 (1006 Metric)
X1-DFN1006-2
-65°C ~ 150°C
CS3D-E3/I
Vishay Semiconductor Diodes Division
DIODE GPP 200V 2A DO-214AB SMC
108.480
-
Standard
200V
2A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2.8µs
5µA @ 200V
26pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
S3K-13-F
Diodes Incorporated
DIODE GEN PURP 800V 3A SMC
25.410
-
Standard
800V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
40pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 150°C
FSM15PL-TP
Micro Commercial Co
DIODE GEN PURP 600V 1A SOD123FL
24.702
-
Standard
600V
1A
1.3V @ 1A
Standard Recovery >500ns, > 200mA (Io)
500ns
5µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-65°C ~ 150°C
FSM17PL-TP
Micro Commercial Co
DIODE GEN PURP 1KV 1A SOD123FL
22.452
-
Standard
1000V
1A
1.3V @ 1A
Standard Recovery >500ns, > 200mA (Io)
500ns
5µA @ 1000V
15pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-65°C ~ 150°C
SS1H20LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 1A SOD123HE
358.860
-
Schottky
200V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 200V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
ES1DL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
27.504
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1GL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
25.434
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1FL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
17.310
-
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SBR3A40SAF-13
Diodes Incorporated
DIODE SBR 40V 3A SMAFLAT
183.186
SBR®
Super Barrier
40V
3A
530mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AC, SMA
SMAF
-65°C ~ 150°C