Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 980/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 1A DO204AL |
8.730 |
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Automotive, AEC-Q101 | Standard | 1600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1600V | 5pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 1A DO204AL |
8.604 |
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Automotive, AEC-Q101 | Standard | 1600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1600V | 5pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO263AB |
5.580 |
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Automotive, AEC-Q101 | Schottky | 35V | 10A | 850mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO263AB |
7.398 |
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Automotive, AEC-Q101 | Schottky | 35V | 10A | 850mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
6.120 |
|
Automotive, AEC-Q101 | Schottky | 45V | 10A | 850mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3A DO214AA |
6.336 |
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- | Avalanche | 600V | 3A | 1.05V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 20µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 50V 200MA SOD80 |
7.812 |
|
Automotive, AEC-Q101 | Standard | 50V | 200mA (DC) | 1.1V @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 50nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AC |
5.040 |
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- | Standard | 200V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 16A TO220AC |
7.632 |
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- | Standard | 200V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 16A TO220AC |
5.274 |
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- | Standard | 300V | 16A | 1.3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 175pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 16A TO220AC |
2.412 |
|
- | Standard | 400V | 16A | 1.3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 175pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
3.006 |
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- | Standard | 200V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 85pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 8A TO220AC |
6.534 |
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- | Standard | 300V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 85pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A TO220AC |
3.526 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 85pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 30A TO220AB |
4.968 |
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- | Schottky | 45V | 30A | 700mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 980pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO263AB |
5.310 |
|
Automotive, AEC-Q101 | Schottky | 35V | 10A | 850mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
3.924 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
4.788 |
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- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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WeEn Semiconductors |
DIODE GEN PURP 600V 15A TO220AC |
8.010 |
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- | Standard | 600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 20A TO220AC |
3.834 |
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- | Standard | 600V | 20A | 2.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 20A TO220F |
2.934 |
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- | Standard | 600V | 20A | 2.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 30A TO247-3 |
6.498 |
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- | Standard | 600V | 30A | 2.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | 175°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
7.704 |
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- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1.5V | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
3.006 |
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- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
8.190 |
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- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
4.572 |
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- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220FP |
6.768 |
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- | Standard | 600V | 8A | 3.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 15A TO220FP |
6.390 |
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- | Standard | 600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 60µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 400V 5A TPFA |
8.586 |
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- | Standard | 400V | 5A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 17ns | 20µA @ 400V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TP-FA | - |
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ON Semiconductor |
DIODE GEN PURP 600V 5A TO220FP |
6.318 |
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- | Standard | 600V | 5A | 1.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | 150°C (Max) |