Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 80/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
36.018 |
|
- | Standard | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 800V 3A AXIAL |
34.848 |
|
- | Standard | 800V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 100V 3A AXIAL |
20.052 |
|
- | Standard | 100V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
24.324 |
|
- | Standard | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD |
14.358 |
|
- | Standard | 50V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
14.814 |
|
SWITCHMODE™ | Standard | 100V | 2A | 940mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD |
14.394 |
|
- | Standard | 400V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 1A AXIAL |
106.236 |
|
- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
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Diodes Incorporated |
DIODE SCHOTTKY 60V 5A POWERDI5 |
38.370 |
|
Automotive, AEC-Q101 | Schottky | 60V | 5A | 770mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 1A AXIAL |
26.424 |
|
SWITCHMODE™ | Standard | 600V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 15A TO277A |
149.232 |
|
eSMP®, TMBS® | Schottky | 50V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Nexperia |
DIODE SCHOTTKY 50V 15A CFP15 |
155.484 |
|
Automotive, AEC-Q101 | Schottky | 50V | 15A | 500mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 1mA @ 50V | 1750pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | -55°C ~ 175°C |
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Nexperia |
DIODE SCHOTTKY 45V 15A CFP15 |
104.574 |
|
Automotive, AEC-Q101 | Schottky | 45V | 15A | 490mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | 900µA @ 15V | 1870pF @ 1V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | CFP15 | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 80V 20A SMPC4.0 |
15.648 |
|
- | Schottky | 80V | 20A | 640mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 80V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Littelfuse |
DIODE SCHOTTKY 20A 80V TO-277B |
41.436 |
|
- | Schottky | 80V | 20A | 700mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 80V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 4A DO201AD |
24.042 |
|
SWITCHMODE™ | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 1A AXIAL |
26.190 |
|
SWITCHMODE™ | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 1A AXIAL |
22.464 |
|
- | Schottky | 100V | 1A | 790mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE SBR 50V 20A POWERDI5060-8 |
48.462 |
|
Automotive, AEC-Q101, TrenchSBR | Super Barrier | 50V | 20A | 500mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 48ns | 500µA @ 50V | 350pF @ 50V, 1MHz | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 1A AXIAL |
71.898 |
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SWITCHMODE™ | Standard | 200V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 4A DO201AD |
16.824 |
|
SWITCHMODE™ | Standard | 100V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 3A AXIAL |
30.828 |
|
- | Standard | 100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 100V | - | Through Hole | DO-201AD, Axial | Axial | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
21.900 |
|
- | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
17.028 |
|
- | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 150V 4A AXIAL |
15.006 |
|
SWITCHMODE™ | Standard | 150V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD |
12.510 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 2.4KV 350MA SOD57 |
101.064 |
|
- | Avalanche | 2400V | 350mA | 3.6V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 2400V | - | Through Hole | SOD-57, Axial | SOD-57 | 175°C (Max) |
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Microsemi |
DIODE SCHOTTKY 60V 5A POWERMITE3 |
45.540 |
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- | Schottky | 60V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 150pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 150V 3.5A SOD64 |
25.332 |
|
- | Avalanche | 150V | 3.5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 10A D2PAK |
298 |
|
SWITCHMODE™ | Schottky | 60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |