Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 72/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
DIODE GEN PURP 800V 1A SMA |
79.992 |
|
- | Standard | 800V | 1A | 1.65V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 4.9A DO214AB |
107.214 |
|
TMBS® | Schottky | 45V | 4.9A | 420mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.85mA @ 45V | 1216pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -40°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 200V 4A SMC |
20.178 |
|
- | Schottky | 200V | 4A | 870mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 70V 200MA DO35 |
62.994 |
|
- | Standard | 70V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 60V | 8pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 125V 500MA DO35 |
36.996 |
|
- | Standard | 125V | 500mA | 1V @ 200mA | Standard Recovery >500ns, > 200mA (Io) | 1µs | 5nA @ 100V | 8pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Diodes Incorporated |
DIODE GEN PURP 600V 3A SMC |
89.214 |
|
- | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
80.832 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
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STMicroelectronics |
DIODE GEN PURP 200V 3A SOD128 |
48.462 |
|
Automotive, AEC-Q101, ECOPACK®2 | Standard | 200V | 3A | 1.02V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 21ns | 1.6µA @ 200V | - | Surface Mount | SOD-128 | SOD128Flat | -40°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 800V 1.5A SMB |
24.846 |
|
- | Standard | 800V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 1A DO214BA |
188.880 |
|
SUPERECTIFIER® | Standard | 1300V | 1A | 3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1300V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO214AA |
41.053 |
|
- | Standard | 600V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 3A DO214AC |
584.508 |
|
- | Schottky | 40V | 3A (DC) | 400mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 100°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A SOD57 |
195.186 |
|
- | Avalanche | 600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1500V 2A SOD57 |
220.986 |
|
- | Avalanche | 1500V | 2A | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 20µs | 3µA @ 1500V | - | Through Hole | SOD-57, Axial | SOD-57 | 140°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.5KV 2A SOD57 |
181.884 |
|
- | Avalanche | 1500V | 2A | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 3µA @ 1200V | - | Through Hole | SOD-57, Axial | SOD-57 | 140°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1A SOD57 |
94.878 |
|
- | Avalanche | 600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 800MA SOD57 |
51.306 |
|
- | Standard | 1400V | 800mA | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 1400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
53.556 |
|
- | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 15A 5DFN |
29.832 |
|
Automotive, AEC-Q101 | Schottky | 45V | 15A | 600mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A MFLAT |
25.014 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 95pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 5A DO201AD |
44.466 |
|
- | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 380pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A DO201AD |
34.002 |
|
- | Schottky | 50V | 5A | 650mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
21.864 |
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Automotive, AEC-Q101 | Schottky | 150V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 150V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AA |
138.858 |
|
- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 200V 3A SMB |
19.014 |
|
- | Schottky | 200V | 3A | 840mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 150V 1A SMA |
313.014 |
|
Q Automotive | Schottky | 150V | 1A | 820mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 150V | - | Surface Mount | DO-214AC, SMA | SMA | 175°C (Max) |
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Diodes Incorporated |
DIODE GEN PURP 600V 6A R6 |
234.216 |
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- | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 400V 6A R6 |
154.536 |
|
- | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 800V 6A R6 |
38.622 |
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- | Standard | 800V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 200V 6A R6 |
30.420 |
|
- | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |