Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 664/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1KV 30A DO5 |
2.808 |
|
- | Standard | 1000V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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Microsemi |
DIODE GEN PURP 1KV 1A D5A |
5.544 |
|
Military, MIL-PRF-19500/427 | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 70A DO203AB |
2.340 |
|
- | Standard | 400V | 70A | 1.85V @ 219.8A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 70A DO203AB |
3.744 |
|
- | Standard | 600V | 70A | 1.85V @ 219.8A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 70A DO203AB |
5.742 |
|
- | Standard, Reverse Polarity | 400V | 70A | 1.85V @ 219.8A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 70A DO203AB |
7.686 |
|
- | Standard, Reverse Polarity | 600V | 70A | 1.85V @ 219.8A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
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|
Microsemi |
DIODE SCHOTTKY 45V 1A DO213AB |
3.580 |
|
Military, MIL-PRF-19500/586 | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 50V 30A DO5 |
3.960 |
|
- | Standard | 50V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 30A DO5 |
5.976 |
|
- | Standard | 100V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 30A DO5 |
5.760 |
|
- | Standard | 200V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 3A D5B |
4.842 |
|
- | Standard | 200V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 3A B-MELF |
7.290 |
|
Military, MIL-PRF-19500/477 | Standard | 50V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 70V 33MA DO213AA |
4.734 |
|
Military, MIL-PRF-19500/444 | Schottky | 70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 75V 300MA B-MELF |
4.806 |
|
Military, MIL-PRF-19500/609 | Standard | 75V | 300mA | 1.2V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 75V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 85A DO203AB |
7.758 |
|
- | Standard, Reverse Polarity | 800V | 85A | 1.75V @ 266.9A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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Semtech |
DIODE GEN PURP 200V 2.1A AXIAL |
7.272 |
|
- | Standard | 200V | 2.1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 25pF @ 5V, 1MHz | Through Hole | Axial | Axial | -55°C ~ 150°C |
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Semtech |
DIODE GEN PURP 300V 2.1A AXIAL |
5.076 |
|
- | Standard | 300V | 2.1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 25pF @ 5V, 1MHz | Through Hole | Axial | Axial | -55°C ~ 150°C |
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Semtech |
DIODE GEN PURP 400V 2.1A AXIAL |
143 |
|
- | Standard | 400V | 2.1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 25pF @ 5V, 1MHz | Through Hole | Axial | Axial | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247-3 |
2.952 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO220-2 |
5.850 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | - | 30µA @ 1200V | 952pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Semtech |
DIODE GEN PURP 50V 1.1A |
6.012 |
|
- | Standard | 50V | 1.1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 5V, 1MHz | Surface Mount | SQ-MELF | - | - |
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Semtech |
DIODE GEN PURP 100V 1.1A |
2.556 |
|
- | Standard | 100V | 1.1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 5V, 1MHz | Surface Mount | SQ-MELF | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 70A DO203AB |
7.074 |
|
- | Standard | 1400V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 30A DO5 |
2.100 |
|
- | Standard, Reverse Polarity | 50V | 30A | 1.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 30A DO5 |
6.750 |
|
- | Standard, Reverse Polarity | 100V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 30A DO5 |
2.070 |
|
- | Standard, Reverse Polarity | 200V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 600V 30A DO5 |
5.274 |
|
- | Standard, Reverse Polarity | 600V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 30A DO5 |
2.808 |
|
- | Standard, Reverse Polarity | 800V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 30A DO5 |
7.452 |
|
- | Standard, Reverse Polarity | 1000V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 3A AXIAL |
7.794 |
|
Military, MIL-PRF-19500/411 | Standard | 50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |