Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 658/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
SCHOTTKY RECTIFIER |
2.232 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
7.722 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
SCHOTTKY RECTIFIER |
3.204 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC |
124 |
|
- | Standard | 1200V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A DO203AB |
2.610 |
|
- | Standard | 1200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A DO203AB |
7.218 |
|
- | Standard, Reverse Polarity | 1200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
8.910 |
|
Military, MIL-PRF-19500/429 | Standard | 1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
RECTIFIER DIODE |
4.518 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 60A TO247AC |
4.788 |
|
- | Standard | 1200V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 1A D5A |
2.646 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 60A TO247AC |
3.186 |
|
- | Standard | 1000V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 60A TO247AC |
6.336 |
|
- | Standard | 1000V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 70A DO203AB |
8.262 |
|
- | Standard, Reverse Polarity | 600V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
8.118 |
|
- | Standard | 600V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
1.870 |
|
- | Standard | 200V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
7.488 |
|
- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
4.698 |
|
- | Standard | 600V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
3.834 |
|
Military, MIL-PRF-19500/360 | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A D5A |
6.750 |
|
Military, MIL-PRF-19500/427 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A D5A |
6.786 |
|
Military, MIL-PRF-19500/429 | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO213AB |
3.672 |
|
Military, MIL-PRF-19500/586 | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 85A DO203AB |
2.070 |
|
- | Standard | 800V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
|
Semtech |
D MET 250MA STD 2KV HR T&R |
7.434 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 70A DO203AB |
3.852 |
|
- | Standard, Reverse Polarity | 1200V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
|
Semtech |
DIODE GEN PURP 50V 6A AXIAL |
3.276 |
|
- | Standard | 50V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Semtech |
DIODE GEN PURP 100V 6A AXIAL |
1.120 |
|
- | Standard | 100V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 82A TO247-2 |
4.914 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 82A (DC) | 1.9V @ 36A | No Recovery Time > 500mA (Io) | - | 500µA @ 600V | 1897pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
8.226 |
|
- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 900V 35A DO203AB |
4.410 |
|
- | Standard | 900V | 35A | 1.8V @ 110A | Standard Recovery >500ns, > 200mA (Io) | - | 3mA @ 900V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 300MA AXIAL |
7.506 |
|
Military, MIL-PRF-19500/578 | Standard | 125V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 50nA @ 20V | 5pF @ 0V, 1MHz | Through Hole | Axial | 05 Plastic Package | -65°C ~ 175°C |