Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 636/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 400V 25A DO203AA |
6.264 |
|
- | Standard | 400V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 25A DO220AA |
5.184 |
|
- | Standard, Reverse Polarity | 400V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 25A DO203AA |
8.658 |
|
- | Standard | 600V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
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|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 25A DO220AA |
3.636 |
|
- | Standard, Reverse Polarity | 600V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 25A DO203AA |
3.834 |
|
- | Standard | 800V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 25A DO220AA |
8.712 |
|
- | Standard, Reverse Polarity | 800V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1KV 25A DO203AA |
7.938 |
|
- | Standard | 1000V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1KV 25A DO220AA |
6.354 |
|
- | Standard, Reverse Polarity | 1000V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 25A DO203AA |
5.346 |
|
- | Standard | 1200V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 25A DO220AA |
8.802 |
|
- | Standard, Reverse Polarity | 1200V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
2.502 |
|
- | Standard | 1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 30A TO247AC |
2.268 |
|
- | Standard | 1000V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
6.066 |
|
- | Standard | 1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 50A DO203AB |
7.596 |
|
- | Standard | 1200V | 50A | 1.4V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
5.742 |
|
- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
7.830 |
|
- | Standard | 200V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 500V 3A B-MELF |
3.060 |
|
- | Standard | 500V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 500V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 50A DO203AB |
2.592 |
|
- | Standard, Reverse Polarity | 1200V | 50A | 1.4V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
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Microsemi |
DIODE GEN PURP 125V 150MA DO35 |
3.042 |
|
Military, MIL-PRF-19500/241 | Standard | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 2nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
5.508 |
|
- | Standard | 600V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 50µA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
6.462 |
|
- | Standard, Reverse Polarity | 600V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 50µA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 16A DO203AA |
2.826 |
|
- | Standard | 200V | 16A | 1.4V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 50µA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
6.768 |
|
Military, MIL-PRF-19500/429 | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
128 |
|
Military, MIL-PRF-19500/286 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
7.794 |
|
- | Standard | 1200V | 50A (DC) | 1.97V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 6A DO4 |
4.536 |
|
- | Standard, Reverse Polarity | 800V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 6A DO4 |
3.526 |
|
- | Standard, Reverse Polarity | 1000V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 50A DO203AB |
8.478 |
|
- | Standard, Reverse Polarity | 1400V | 50A | 1.5V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 160°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 16A DO203AA |
6.732 |
|
- | Standard | 600V | 16A | 1.4V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 50µA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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IXYS |
DIODE AVALANCHE 1800V 3.6A AXIAL |
50 |
|
- | Avalanche | 1800V | 3.6A | 1.25V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 2mA @ 1800V | - | Through Hole | Axial | Axial | -40°C ~ 180°C |