Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 609/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |
5.688 |
|
- | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
4.176 |
|
- | Standard | 1200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
8.622 |
|
- | Standard | 1200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
6.444 |
|
- | Standard | 1200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
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|
IXYS |
DIODE SCHOTTKY 100V 10A TO263AB |
6.498 |
|
- | Schottky | 100V | 10A | 840mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
4.536 |
|
- | Standard | 800V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A TO263AB |
5.076 |
|
- | Standard | 600V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
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|
IXYS |
DIODE SCHOTTKY 150V 30A TO220AC |
6.759 |
|
- | Schottky | 150V | 30A | 930mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 900µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 200V 5A DO214AB |
6.606 |
|
- | Standard | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 52.3A TO263 |
8.046 |
|
- | Standard | 600V | 52.3A (DC) | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 126ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | -40°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 20A TO263AB |
6.372 |
|
- | Standard | 1000V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
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|
IXYS |
DIODE GEN PURP 600V 30A TO263 |
5.346 |
|
- | Standard | 600V | 30A | 2.37V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | -55°C ~ 150°C |
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IXYS |
DIODE GEN PURP 300V 30A TO220AC |
4.572 |
|
HiPerFRED™ | Standard | 300V | 30A | 1.35V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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|
IXYS |
DIODE GEN PURP 300V 30A TO220AC |
3.384 |
|
HiPerFRED²™ | Standard | 300V | 30A | 1.17V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 300V | 42pF @ 150V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Microsemi |
GLASS AXIAL SWITCHING DIODE |
7.866 |
|
- | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 31A TO220-2 |
7.974 |
|
- | Standard | 1200V | 31A (DC) | 2.15V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 195ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 150°C |
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Microsemi |
DIODE ULT FAST 5A 50V SMCJ |
7.200 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE GEN PURP 100V 5A DO214AB |
8.262 |
|
- | Standard | 100V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 150V 5A DO214AB |
8.604 |
|
- | Standard | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 300V 5A DO214AB |
7.398 |
|
- | Standard | 300V | 5A | 1.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 400V 5A DO214AB |
4.464 |
|
- | Standard | 400V | 5A | 1.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 500V 5A DO214AB |
8.568 |
|
- | Standard | 500V | 5A | 1.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 500V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 5A DO214AB |
2.934 |
|
- | Standard | 600V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 700V 5A DO214AB |
6.804 |
|
- | Standard | 700V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 700V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 800V 5A DO214AB |
251 |
|
- | Standard | 800V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 800V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 20A 1200V TO-220 |
8.550 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 8A D-PAK |
5.472 |
|
- | Standard | 1600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 8A D-PAK |
7.038 |
|
- | Standard | 1600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 8A D-PAK |
4.140 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 1600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 8A TO252 |
5.634 |
|
- | Standard | 1600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 150°C |