Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 564/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
6.102 |
|
- | Standard | 100V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A ITO220AC |
2.484 |
|
- | Standard | 200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC |
3.508 |
|
- | Standard | 400V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A ITO220AC |
8.730 |
|
- | Standard | 600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A ITO220AC |
6.336 |
|
- | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A ITO220AC |
3.312 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A TO220AC |
7.686 |
|
- | Standard | 50V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 8A TO220AC |
6.228 |
|
- | Standard | 150V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 6A TO277A |
3.312 |
|
- | Schottky | 50V | 6A | 570mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 20A 5DFN |
8.118 |
|
- | Schottky | 45V | 20A | 610mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 80V ITO-220AB |
8.964 |
|
- | Schottky | 80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 10A TO220AC |
3.384 |
|
- | Standard | 200V | 10A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-262AA |
3.312 |
|
Automotive, AEC-Q101 | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 100V 1A DO41 |
8.730 |
|
- | Schottky | 100V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 125°C |
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IXYS |
DIODE GEN PURP 300V 10A TO252 |
4.446 |
|
HiPerFRED™ | Standard | 300V | 10A | 1.27V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 300V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 20V 1A DO214AA |
8.892 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 30V 1A DO214AA |
3.546 |
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- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 1A 30V POWERMITE |
2.754 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE SCHOTTKY 40V 1A POWERMITE |
4.032 |
|
- | Schottky | 40V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 1A 70V POWERMITE |
7.128 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE SCHOTTKY 40V 1A POWERMITE |
6.930 |
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- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 1A 30V POWERMITE |
2.178 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE SCHOTTKY 1A 70V POWERMITE |
2.394 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE SCHOTTKY 40V 1A POWERMITE |
8.910 |
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- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 3.5A SOD64 |
3.780 |
|
- | Avalanche | 100V | 3.5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3.2A TO263AC |
2.574 |
|
Automotive, AEC-Q101, eSMP® | Standard | 600V | 3.2A | 1.15V @ 12A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 20µA @ 600V | 90pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 100V 5A POWERDI5 |
2.052 |
|
Automotive, AEC-Q101 | Schottky | 100V | 5A | 790mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 3A SMB |
6.786 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 167pF @ 0V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 16A TO220AB |
7.560 |
|
- | Standard | 600V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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ON Semiconductor |
UFR DPAK PN 6A 200V |
7.398 |
|
- | Standard | 600V | 6A | 1.5V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 83ns | 100µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |