Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 534/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SMC Diode Solutions |
DIODE SCHOTTKY 150V 15A D2PAK |
8.676 |
|
- | Schottky | 150V | 15A | 860mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | 500pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 2A MFLAT |
5.202 |
|
- | Standard | 400V | 2A | 1.8V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 8A TO277A |
4.446 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 120V | 8A | 840mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 20V 5A DO201AD |
5.310 |
|
- | Schottky | 20V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
6.984 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 12A DO214AB |
7.452 |
|
- | Standard | 1000V | 12A | 1.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 1000V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A DO214AB |
4.806 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 410mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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|
ON Semiconductor |
DIODE SCHOTTKY 8A 100V SO8FL |
3.942 |
|
Automotive, AEC-Q101 | Schottky | 100V | 8A | 900mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2.4A TO277A |
8.694 |
|
eSMP® | Avalanche | 800V | 2.4A (DC) | 962mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 2.4A TO277 |
7.164 |
|
eSMP® | Avalanche | 1000V | 2.4A (DC) | 962mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.6A TO277A |
6.084 |
|
eSMP® | Avalanche | 200V | 1.6A (DC) | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.6A TO277A |
4.428 |
|
eSMP® | Avalanche | 600V | 1.6A (DC) | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.6A TO277A |
7.866 |
|
eSMP® | Avalanche | 400V | 1.6A (DC) | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Sanken |
DIODE GEN PURP 400V 1.5A AXIAL |
8.406 |
|
- | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 400V 1.5A AXIAL |
4.608 |
|
- | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1A AXIAL |
5.130 |
|
- | Standard | 600V | 1A | 2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 500µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1A AXIAL |
3.420 |
|
- | Standard | 600V | 1A | 2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 500µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1A AXIAL |
4.860 |
|
- | Standard | 600V | 1A | 2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 500µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1A AXIAL |
5.616 |
|
- | Standard | 600V | 1A | 2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 500µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 800V 1.2A AXIAL |
6.768 |
|
- | Standard | 800V | 1.2A | 910mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 800V 1.2A AXIAL |
7.866 |
|
- | Standard | 800V | 1.2A | 910mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 800V 1.2A AXIAL |
3.438 |
|
- | Standard | 800V | 1.2A | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 800V 1.2A AXIAL |
4.302 |
|
- | Standard | 800V | 1.2A | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1.1A AXIAL |
2.970 |
|
- | Standard | 600V | 1.1A | 1.2V @ 1.1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 1.1A AXIAL |
2.790 |
|
- | Standard | 600V | 1.1A | 1.2V @ 1.1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 1KV 800MA AXIAL |
8.586 |
|
- | Standard | 1000V | 800mA | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 800V 1.1A AXIAL |
5.940 |
|
- | Standard | 800V | 1.1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 800V 1.1A AXIAL |
6.246 |
|
- | Standard | 800V | 1.1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 1KV 1.5A AXIAL |
7.164 |
|
- | Standard | 1000V | 1.5A | 2V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 1KV 1.5A AXIAL |
4.878 |
|
- | Standard | 1000V | 1.5A | 2V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |