Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 514/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE AVALANCHE 200V 3A TO277A |
6.372 |
|
- | Avalanche | 200V | 3A | 1.88V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 40V 15A TO220AC |
7.272 |
|
- | Schottky | 40V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 900pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 80V 15A TO220AC |
8.766 |
|
- | Schottky | 80V | 15A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 80V | 500pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
2.574 |
|
Automotive, AEC-Q101 | Standard | 100V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | 42pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
4.590 |
|
Automotive, AEC-Q101 | Standard | 150V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 150V | 42pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
6.552 |
|
Automotive, AEC-Q101 | Standard | 200V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 4A DO201AD |
2.070 |
|
- | Standard | 400V | 4A | 1.3V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 1A SMA |
3.870 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 8pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A DO201AD |
6.372 |
|
- | Standard | 50V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A DO201AD |
4.482 |
|
- | Standard | 100V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 2A 60V DO-41 |
6.030 |
|
- | Schottky | 60V | 2A | 680mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 1A SOT23 |
3.870 |
|
Automotive, AEC-Q101 | Schottky | 40V | 1A | 425mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 12ns | 100µA @ 30V | 25pF @ 30V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 5A DO214AA |
6.624 |
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Automotive, AEC-Q101 | Schottky | 90V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 8A TO277A |
5.310 |
|
eSMP® | Schottky | 20V | 8A | 570mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 330pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AB |
6.030 |
|
- | Standard | 100V | 2A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AB |
3.472 |
|
- | Standard | 150V | 2A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AB |
4.014 |
|
- | Standard | 100V | 2A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AB |
3.418 |
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- | Standard | 150V | 2A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 50V 3A DO201AA |
3.438 |
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- | Standard | 50V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 100V 3A DO201AA |
4.230 |
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- | Standard | 100V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 200V 3A DO201AA |
7.524 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 300V 3A DO201AA |
2.214 |
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- | Standard | 300V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 400V 3A DO201AA |
7.272 |
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- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 600V 3A DO201AA |
7.236 |
|
- | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 800V 3A DO201AA |
3.744 |
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- | Standard | 800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 1KV 3A DO201AA |
6.984 |
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- | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 50V 3A DO201AA |
3.222 |
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- | Standard | 50V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 100V 3A DO201AA |
5.940 |
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- | Standard | 100V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 200V 3A DO201AA |
3.744 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 300V 3A DO201AA |
7.794 |
|
- | Standard | 300V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | DO-201AA, DO-27, Axial | DO-27 | -55°C ~ 150°C |