Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 510/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE SCHOTTKY 30V 1A SJP |
3.204 |
|
- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 125°C |
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Sanken |
DIODE SCHOTTKY 40V 1A SJP |
6.642 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 1A SJP |
6.462 |
|
- | Schottky | 60V | 1A | 680mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 90V 1A SJP |
5.040 |
|
- | Schottky | 90V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 30V 1A SJP |
3.780 |
|
- | Schottky | 30V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 1.5A SJP |
7.488 |
|
- | Schottky | 60V | 1.5A | 700mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 60V 5A POWERDI5 |
4.572 |
|
- | Super Barrier | 60V | 5A | 520mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 220µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 60V 5A POWERDI5 |
7.704 |
|
- | Super Barrier | 60V | 5A | 520mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 220µA @ 60V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 4A DO201AD |
5.292 |
|
- | Standard | 500V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 4A DO201AD |
2.034 |
|
- | Standard | 600V | 4A | 1.7V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 1.5A PMDS |
8.487 |
|
- | Schottky | 30V | 1.5A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO213AB |
4.554 |
|
- | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 80pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO213AB |
4.212 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 80pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO214AA |
4.050 |
|
Automotive, AEC-Q101 | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO214BA |
3.762 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO214BA |
6.948 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 15pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
7.812 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO214BA |
6.426 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 15pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A DO214AB |
8.604 |
|
- | Schottky | 50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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ON Semiconductor |
6A 200V ULTRA FAST RECTIFIER |
3.690 |
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* | - | - | - | - | - | - | - | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | - |
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ON Semiconductor |
DIODE SCHOTTKY 35V 8A DPAK |
5.724 |
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Automotive, AEC-Q101, SWITCHMODE™ | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A M-FLAT |
6.282 |
|
- | Schottky | 40V | 2A | 520mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GP 1.4KV 500MA DO204AL |
8.064 |
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Automotive, AEC-Q101, Superectifier® | Standard | 1400V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 1.5KV 500MA DO204AL |
5.562 |
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Automotive, AEC-Q101, Superectifier® | Standard | 1500V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1500V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 1.6KV 500MA DO204AL |
5.130 |
|
Automotive, AEC-Q101, Superectifier® | Standard | 1600V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 1.7KV 500MA DO204AL |
3.510 |
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Automotive, AEC-Q101, Superectifier® | Standard | 1700V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1700V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
5.184 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
3.490 |
|
- | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
3.114 |
|
- | Standard | 400V | 3A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO214AB |
8.352 |
|
- | Standard | 600V | 3A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |