Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 469/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER SMB |
4.734 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GP 1KV 1.6A DO214AB |
5.616 |
|
- | Standard | 1000V | 1.6A (DC) | 940mV @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 1000V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
2.862 |
|
- | Standard | 400V | 2A | 1.45V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 400V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A M-FLAT |
3.150 |
|
- | Schottky | 30V | 1A | 370mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | 70pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A M-FLAT |
5.472 |
|
- | Schottky | 30V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 70pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Diodes Incorporated |
SCHOTTKY DIODE SOT23 |
3.474 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.6KV 1.5A |
6.282 |
|
Automotive, AEC-Q101 | Avalanche | 1600V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 1600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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|
Bourns |
DIO RECT VRRM 800V 2A SMB |
8.118 |
|
- | Standard | 800V | 2A | 2.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 800V | 19pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE SCHOTTKY 40V 4A 5DFN |
7.272 |
|
- | Schottky | 40V | 4A | 650mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 40V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 80V 3A SMC |
5.310 |
|
- | Schottky | 80V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 80V | 105pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 20V 3A DO214AB |
2.448 |
|
- | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 125°C (Max) |
|
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 2A MFLAT |
6.318 |
|
- | Standard | 600V | 2A | 2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 600V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 2A 50V DO-41 |
3.690 |
|
- | Schottky | 50V | 2A | 680mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
4.878 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
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Diodes Incorporated |
SUPERFAST RECOVERY RECTIFIER D-F |
4.896 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 2A PMDU |
6.768 |
|
Automotive, AEC-Q101 | Schottky | 60V | 2A | 610mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 5A DO201AD |
4.428 |
|
- | Schottky | 90V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A DO201AD |
4.680 |
|
- | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 100V 2A DO214AA |
4.230 |
|
- | Schottky | 100V | 2A | 750mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO214AC |
3.132 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
4.824 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO214BA |
8.082 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 20V 3A DPAK |
2.340 |
|
Automotive, AEC-Q101 | Schottky | 20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 3A DPAK |
4.248 |
|
Automotive, AEC-Q101 | Schottky | 30V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A DPAK |
8.190 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 50V 3A DPAK |
4.176 |
|
Automotive, AEC-Q101 | Schottky | 50V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 50V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 12A 5DFN |
5.310 |
|
- | Schottky | 100V | 12A | 730mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 55µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO221AC |
5.832 |
|
FRED Pt® | Standard | 100V | 2A | 930mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | - | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 8A 5DFN |
6.300 |
|
- | Schottky | 30V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -40°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 8A 5DFN |
5.274 |
|
- | Schottky | 30V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -40°C ~ 150°C |