Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 435/1165
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
8.604 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3A DO221AC |
7.578 |
|
Automotive, AEC-Q101, TMBS®, SlimSMA™ | Schottky | 100V | 3A | 720mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 364pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3A DO221AC |
6.462 |
|
Automotive, AEC-Q101, TMBS®, SlimSMA™ | Schottky | 100V | 3A | 720mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 364pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO221AC |
2.754 |
|
Automotive, AEC-Q101, TMBS®, SlimSMA™ | Schottky | 60V | 3A | 620mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | 500pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO221AC |
6.786 |
|
Automotive, AEC-Q101, TMBS®, SlimSMA™ | Schottky | 60V | 3A | 620mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | 500pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A MPG06 |
5.328 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 8DFN |
7.596 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
DIODE GEN PURP 200V 2A POWERMITE |
6.750 |
|
- | Standard | 200V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 200V | - | Surface Mount | DO-216AA | Powermite | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AA |
5.976 |
|
Automotive, AEC-Q101 | Standard | 200V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 400V 2A DO214AA |
6.804 |
|
- | Standard | 400V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
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Comchip Technology |
DIODE GEN PURP 600V 2A DO214AA |
5.652 |
|
- | Standard | 600V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
|
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Comchip Technology |
DIODE GEN PURP 50V 2A DO214AA |
3.472 |
|
- | Standard | 50V | 2A | 920mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
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Comchip Technology |
DIODE GEN PURP 100V 2A DO214AA |
7.164 |
|
- | Standard | 100V | 2A | 920mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
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Sanken |
DIODE GEN PURP 200V 1A AXIAL |
2.844 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 100V 1A AXIAL |
6.012 |
|
- | Standard | 100V | 1A | 970mV @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 200V 1A AXIAL |
4.068 |
|
- | Standard | 200V | 1A | 970mV @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE GEN PURP 200V 1A AXIAL |
2.628 |
|
- | Standard | 200V | 1A | 970mV @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 1KV 2A DO214AC |
6.570 |
|
- | Standard | 1000V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 1000V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (HSMA) | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 3A DO214AC |
3.726 |
|
Automotive, AEC-Q101 | Schottky | 20V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 3A DO214AC |
4.482 |
|
Automotive, AEC-Q101 | Schottky | 30V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 3A DO214AC |
2.898 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 3A DO214AC |
8.010 |
|
Automotive, AEC-Q101 | Schottky | 50V | 3A | 720mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 50V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO214AC |
7.866 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3A | 720mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 3A DO214AC |
2.124 |
|
Automotive, AEC-Q101 | Schottky | 90V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 40V 3A SOD123F |
7.524 |
|
Automotive, AEC-Q101 | Super Barrier | 40V | 3A | 490mV @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 180µA @ 40V | - | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AA |
3.168 |
|
- | Standard | 50V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
6.966 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
6.660 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
7.776 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
4.266 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |