Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 426/1165
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 600MA TS-1 |
3.870 |
|
- | Standard | 50V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 50V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 600MA TS-1 |
3.150 |
|
- | Standard | 100V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 100V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 600MA TS-1 |
5.346 |
|
- | Standard | 150V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 150V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 600MA TS-1 |
5.706 |
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- | Standard | 200V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 200V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 1A DSN1006-2 |
6.876 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A DO214AC |
2.196 |
|
Automotive, AEC-Q101 | Schottky | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1A DO214AC |
6.408 |
|
- | Schottky | 90V | 1A | 770mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | 175°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A M-FLAT |
4.608 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1A US-FLAT |
3.186 |
|
- | Schottky | 20V | 1A | 370mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 40pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO219AB |
5.274 |
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Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 3µA @ 600V | - | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A DO214AC |
7.920 |
|
Automotive, AEC-Q101 | Schottky | 20V | 1A | 390mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A DO214AC |
4.302 |
|
Automotive, AEC-Q101 | Schottky | 30V | 1A | 390mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A DO214AC |
6.174 |
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Automotive, AEC-Q101 | Schottky | 40V | 1A | 390mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Rohm Semiconductor |
DIODE GEN PURP 200V 700MA PMDU |
8.982 |
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- | Standard | 200V | 700mA | 850mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A |
7.884 |
|
Automotive, AEC-Q101 | Avalanche | 200V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A |
2.610 |
|
Automotive, AEC-Q101 | Avalanche | 400V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A |
6.192 |
|
Automotive, AEC-Q101 | Avalanche | 600V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.5A |
3.996 |
|
Automotive, AEC-Q101 | Avalanche | 200V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A |
5.958 |
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Automotive, AEC-Q101 | Avalanche | 400V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A |
6.444 |
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Automotive, AEC-Q101 | Avalanche | 600V | 1.5A | 1.25V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 1µA @ 600V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 50V 2A SMB |
3.168 |
|
- | Schottky | 50V | 2A | 650mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | 75pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 600MA TS-1 |
7.524 |
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- | Standard | 150V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 150V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1.4A DO221AC |
4.266 |
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Automotive, AEC-Q101 | Standard | 100V | 1.4A (DC) | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 100µA @ 100V | 19pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.4A DO221AC |
4.716 |
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Automotive, AEC-Q101 | Standard | 200V | 1.4A (DC) | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 200V | 19pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.4A DO221AC |
3.996 |
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Automotive, AEC-Q101 | Standard | 400V | 1.4A (DC) | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 400V | 19pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC | -55°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 60V 2A DO214AC |
4.428 |
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- | Schottky | 60V | 2A (DC) | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 200V 3A DO201AD |
8.964 |
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- | Standard | 200V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 600V 3A DO201AD |
1.395 |
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- | Standard | 600V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 600V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 80V 3A DO201AD |
8.172 |
|
- | Schottky | 80V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 80V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Comchip Technology |
DIODE GEN PURP 400V 1A MINISMA |
8.226 |
|
- | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -55°C ~ 150°C |