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Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 422/1165
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Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
BYM10-1000/1
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1A DO213AB
5.238
SUPERECTIFIER®
Standard
1000V
1A
1.2V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 1000V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
BYM10-400/1
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO213AB
4.122
SUPERECTIFIER®
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
GL41J/1
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO213AB
7.488
SUPERECTIFIER®
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
SK19BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A DO214AA
3.580
Automotive, AEC-Q101
Schottky
90V
1A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SS2FL3HM3/I
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 2A DO-219AB
7.470
Automotive, AEC-Q101, eSMP®
Schottky
30V
2A
540mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
145pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
SS2FL4HM3/I
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 2A DO-219AB
8.982
Automotive, AEC-Q101, eSMP®
Schottky
40V
2A
580mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
220µA @ 40V
125pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
SS2FH10HM3/I
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 100V 2A DO-219AB
7.812
Automotive, AEC-Q101, eSMP®
Schottky
100V
2A
860mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 100V
70pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
SS2FL3HM3/H
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 2A DO-219AB
2.952
Automotive, AEC-Q101, eSMP®
Schottky
30V
2A
540mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
145pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
SS2FL4HM3/H
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 2A DO-219AB
4.428
Automotive, AEC-Q101, eSMP®
Schottky
40V
2A
580mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
220µA @ 40V
125pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 150°C
GP02-35-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 3.5KV 250MA DO204
3.490
SUPERECTIFIER®
Standard
3500V
250mA
3V @ 1A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 3500V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
RGP02-17E-E3/54
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.7KV 500MA DO204
2.196
SUPERECTIFIER®
Standard
1700V
500mA
1.8V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 1700V
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
ESH2B M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
3.366
-
Standard
100V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2C M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
5.022
-
Standard
150V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2D M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
8.982
-
Standard
200V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
XBS013S16R-G
Torex Semiconductor Ltd
DIODE SCHOTTKY 30V 100MA SOD723
5.544
-
Schottky
30V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
2ns
2µA @ 25V
6pF @ 0V, 1MHz
Surface Mount
SOD-723
SOD-723
125°C (Max)
S2AHE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 1.5A DO214AA
3.418
-
Standard
50V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 50V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S2BHE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.5A DO214AA
2.196
-
Standard
100V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 100V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S2DHE3_A/H
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1.5A DO214AA
5.580
-
Standard
200V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
16pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
CUS06(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 20V 1A US-FLAT
2.502
-
Schottky
20V
1A
450mV @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
-
30µA @ 20V
40pF @ 10V, 1MHz
Surface Mount
SC-76, SOD-323
US-FLAT (1.25x2.5)
-40°C ~ 150°C
SURA8130T3G-VF01
ON Semiconductor
DIODE GEN PURP 300V 1A SMA
6.786
*
-
-
-
-
-
-
-
-
-
-
-
-
SURA8215T3G-VF01
ON Semiconductor
DIODE GEN PURP 150V 2A SMA
7.776
*
-
-
-
-
-
-
-
-
-
-
-
-
NTS12120MFST1G
ON Semiconductor
DIODE SCHOTTKY 120V 12A 5DFN
3.024
-
Schottky
120V
12A
830mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
55µA @ 100V
-
Surface Mount
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
-55°C ~ 150°C
BYD13DGPHE3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO204AL
5.832
-
Standard
200V
1A
-
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
BYD13GGPHE3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO204AL
2.340
-
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 200V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
BYD13JGPHE3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO204AL
7.362
-
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 200V
8pF @ 1V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
BYD13KGPHE3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1A DO204AL
4.176
-
Standard
800V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 200V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
BYD13MGPHE3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
6.372
-
Standard
1000V
1A
-
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1000V
7pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
BYD33DGPHE3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO204AL
5.256
-
Standard
200V
1A
1.3V @ 1A
Small Signal =< 200mA (Io), Any Speed
150ns
5µA @ 200V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
BYD33GGPHE3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO204AL
2.646
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
BYD33JGPHE3/73
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO204AL
3.582
-
Standard
600V
1A
1.3V @ 1A
Standard Recovery >500ns, > 200mA (Io)
250ns
-
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C