Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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Lieferantengerätepaket

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Betriebstemperatur - Verbindungsstelle

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

Datensätze 34.936

Seite 372/1165

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
SS115L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	5.490	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	6.210	-	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS15-E3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 1A DO214AC	6.516	-	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
1N4934GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL	6.714	SUPERECTIFIER®	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4935GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL	2.052	SUPERECTIFIER®	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4942GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL	8.982	SUPERECTIFIER®	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4944GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL	30.821	SUPERECTIFIER®	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4946GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	2.430	SUPERECTIFIER®	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4948GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL	2.880	SUPERECTIFIER®	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	1µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4933GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	7.902	SUPERECTIFIER®	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4935GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL	8.244	SUPERECTIFIER®	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4944GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL	8.118	SUPERECTIFIER®	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4946GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	4.644	SUPERECTIFIER®	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BA158GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	2.304	SUPERECTIFIER®	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BA159DGP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL	4.338	SUPERECTIFIER®	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BY206GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 400MA DO204	4.050	SUPERECTIFIER®	Standard	300V	400mA	1.5V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1µs	2µA @ 300V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4933GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL	4.392	SUPERECTIFIER®	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SS1F4-M3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A DO219AB	2.772	-	Schottky	40V	1A	520mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	85pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	175°C (Max)
HT18G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	2.268	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT18G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	8.226	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
EGP10B	ON Semiconductor	DIODE GEN PURP 100V 1A DO41	6.228	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
EGP10F	ON Semiconductor	DIODE GEN PURP 300V 1A DO41	6.570	-	Standard	300V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
S2K M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	5.472	-	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2M M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO214AA	5.922	-	Standard	-	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1DLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	2.772	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	2.124	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	7.740	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	5.544	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1KL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	3.348	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF2L4G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	2.232	-	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

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