Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

Datensätze 34.936

Seite 315/1165

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
TSS0230U RGG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 35V 200MA 0603	4.374	-	Schottky	35V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	18pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	0603	-40°C ~ 125°C
CTS05F40,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA CST2	6.084	-	Schottky	40V	500mA	810mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	15µA @ 40V	28pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	150°C (Max)
BAT81S-TAP	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 30MA DO35	3.400	Automotive, AEC-Q101	Schottky	40V	30mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 40V	1.6pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	125°C (Max)
BAV19W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA SOD123	4.212	Automotive, AEC-Q101	Standard	100V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 100V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
BAV21W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 250MA SOD123	8.766	Automotive, AEC-Q101	Standard	200V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 150V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	175°C (Max)
BAV19W-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA SOD123	4.068	Automotive, AEC-Q101	Standard	100V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 100V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
1N4933G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	4.770	-	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	2.484	Automotive, AEC-Q101	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	8.802	-	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	8.568	Automotive, AEC-Q101	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	8.892	-	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	3.726	Automotive, AEC-Q101	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4936G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8.262	-	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4937G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	7.002	-	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA159G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	4.392	-	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA159GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	4.788	Automotive, AEC-Q101	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR105G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	4.320	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR106G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	6.750	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR107G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	4.734	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1T1G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3.366	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T2G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	5.562	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T3G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	8.820	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T4G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	2.574	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T5G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	7.200	-	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T6G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	5.022	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T7G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	5.454	-	Standard	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1N4001G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7.884	-	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4002G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	4.860	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAS716F	Nexperia	DIODE GEN PURP 75V 200MA SOD523	3.492	-	Standard	75V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	3µs	5nA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	150°C (Max)
BAS16-G	Comchip Technology	DIODE GEN PURP 75V 200MA SOT23	6.642	-	Standard	75V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-55°C ~ 150°C

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