Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 303/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
3.420 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 29ns | 50µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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Kyocera |
DIODE FAST RECOVERY 600V 8A TO-2 |
5.598 |
|
- | Standard | 600V | 8A | 2.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 20µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220-2 Full-Mold | -55°C ~ 175°C |
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Kyocera |
DIODE SCHOTTKY 150V 20A TO-220 F |
3.276 |
|
- | Schottky | 150V | 20A | 900mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220 Full-Mold | -40°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 25V 15A TO220AC |
3.186 |
|
- | Schottky | 25V | 15A | 460mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.3mA @ 25V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 650V 6A TO220AC |
7.758 |
|
- | Schottky | 650V | 6A | 1.75V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 650V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 8A TO220AC |
3.186 |
|
- | Silicon Carbide Schottky | 650V | 8A | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 650V | 414pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Kyocera |
DIODE FAST RECOVERY 600V 10A TO- |
2.466 |
|
- | Standard | 600V | 10A | 2.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220-2 Full-Mold | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 600V 8A TO220AC |
6.768 |
|
- | Silicon Carbide Schottky | 600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 450pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 8A TO220AC |
6.480 |
|
- | Schottky | 650V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 650V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1.2KV 30A TO247 |
4.032 |
|
- | Standard | 1200V | 30A | 2.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 370ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 10A TO220AC |
2.718 |
|
- | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 10A TO220AC |
4.140 |
|
- | Schottky | 650V | 10A | 1.75V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 650V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 400V 60A TO247 |
44 |
|
- | Standard | 400V | 60A | 1.35V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 20µA @ 400V | - | Through Hole | TO-247-3 | TO-247 | 175°C (Max) |
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ON Semiconductor |
SIC DIODE 650V 20A |
20.772 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Through Hole | TO-220-3 | TO-220-3 | -55°C ~ 175°C |
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GeneSiC Semiconductor |
SIC DIODE 1200V 5A TO-220-2 |
3.114 |
|
- | Silicon Carbide Schottky | 1200V | 29A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 4µA @ 1200V | 359pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 20A TO220AC |
2.419 |
|
ECOPACK®2 | Silicon Carbide Schottky | 650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 10A DO247 |
7.974 |
|
ECOPACK®2 | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1200V | 725pF @ 0V, 1MHz | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
H2PAK HC 2-3 LEADS |
7.092 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 20A | 1.5V @ 20A | No Recovery Time > 500mA (Io) | - | 120µA @ 1.2kV | 1650pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK HV | -40°C ~ 175°C |
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ON Semiconductor |
SIC DIODE 650V 40A |
3.690 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 866pF @ 1V, 100kHz | Through Hole | TO-220-3 | TO-220-3 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 15A DO247 |
6.876 |
|
ECOPACK®2 | Silicon Carbide Schottky | 1200V | 15A | 1.5V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 1200V | 1200pF @ 0V, 1MHz | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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ON Semiconductor |
SIC DIODE 650V |
7.053 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 866pF @ 1V, 100kHz | Through Hole | TO-247-3 Variant | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
SIC DIODE 650V |
2.250 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 50A (DC) | 1.7V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 2030pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 20A DO247 |
6.804 |
|
ECOPACK®2 | Silicon Carbide Schottky | 1200V | 20A | 1.5V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 1650pF @ 0V, 1MHz | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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Cree/Wolfspeed |
E SERIES, 10 AMP, 1200V G4 SCHOT |
2.610 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
UNRLS, FG, GEN2, SIC SBD, TO-220 |
3.078 |
|
- | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
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GeneSiC Semiconductor |
SIC DIODE 1700V 5A TO-247-2 |
3.528 |
|
- | Silicon Carbide Schottky | 1700V | 25A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 6µA @ 1700V | 334pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Microsemi |
UNRLS, FG, GEN2, SIC SBD, TO-268 |
7.488 |
|
- | Silicon Carbide Schottky | 1200V | 30A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | - | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | - |
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Cree/Wolfspeed |
10A, 1700V, G5 ZREC SIC SCHOTTKY |
5.832 |
|
Z-Rec® | Silicon Carbide Schottky | 1700V | 33A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1700V | 830pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Micro Commercial Co |
100A,1200V,FRED MODULES, F2 PACK |
4.464 |
|
- | Standard | 1200V | 100A | 1.58V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 135ns | 1mA @ 1200V | - | Chassis Mount | F2 Module | F2 | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP D12026K-1 |
3.852 |
|
- | Standard | 4500V | 1560A | 4.3V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | BG-D12026K-1 | 140°C (Max) |