Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 293/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO252AA |
5.904 |
|
FRED Pt® | Standard | 600V | 6A | 1.25V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 154ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220FP |
8.676 |
|
SWITCHMODE™ | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 20A TO220AC |
7.650 |
|
SWITCHMODE™ | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 50µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 16A ITO220AC |
3.870 |
|
- | Standard | 600V | 16A | 1.7V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 600V | 110pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 5A DPAK |
3.454 |
|
ECOPACK® | Silicon Carbide Schottky | 1200V | 5A | 1.5V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 12µA @ 1200V | 190pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
|
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ON Semiconductor |
DIODE GEN PURP 600V 15A TO220-2 |
6.336 |
|
SWITCHMODE™ | Standard | 600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 15µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 150°C |
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|
IXYS |
DIODE GEN PURP 300V 40A TO263 |
4.284 |
|
HiPerFRED™ | Standard | 300V | 40A | 1.44V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 300V | 50pF @ 150V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 600V 10A TO220FP |
6.066 |
|
- | Standard | 600V | 10A | 1.5V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220ACFP | -55°C ~ 150°C |
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IXYS |
DIODE GEN PURP 400V 10A TO220AC |
2.970 |
|
HiPerFRED™ | Standard | 400V | 10A | 1.32V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 1µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 20A TO220AB |
6.912 |
|
TMBS® | Schottky | 100V | 20A | 900mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A ITO220AC |
2.646 |
|
- | Schottky | 100V | 10A | 770mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5µA @ 100V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A D2PAK |
2.574 |
|
FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
7.884 |
|
- | Standard | 600V | 8A | 1.85V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 8µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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SMC Diode Solutions |
DIODE GEN PURP 400V 60A TO247AC |
6.480 |
|
- | Standard | 400V | 60A | 1.47V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 600V 15A TO220 |
8.694 |
|
- | Standard | 600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
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Littelfuse |
DIODE GEN PURP 800V 15.9A TO220 |
3.132 |
|
- | Standard | 800V | 15.9A | - | Standard Recovery >500ns, > 200mA (Io) | 4µs | 20µA @ 800V | - | Through Hole | TO-220-3 Isolated Tab | TO-220AB-L | -40°C ~ 125°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 150V TO247AD |
432 |
|
- | Schottky | 150V | - | 830mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | 820pF @ 5V, 1MHz | Through Hole | TO-247-3 | TO-247AD | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 60A TO247-3 |
3.312 |
|
- | Standard | 650V | 60A | 1.7V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 40µA @ 650V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 5A TO220AC |
5.058 |
|
ECOPACK®2 | Silicon Carbide Schottky | 1200V | 5A | 1.5V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 1200V | 450pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1KV 15A TO247 |
5.616 |
|
- | Standard | 1000V | 15A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 260ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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IXYS |
DIODE GP 1KV 30A ISOPLUS247 |
6.876 |
|
- | Standard | 1000V | 30A | 2.4V @ 36A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 750µA @ 1000V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -40°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 200V 30A TO247 |
4.860 |
|
- | Standard | 200V | 30A | 1.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 250µA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
4.446 |
|
- | Standard | 100V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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IXYS |
DIODE GP 1.2KV 30A ISOPLUS247 |
3.060 |
|
HiPerFRED™ | Standard | 1200V | 30A | 2.74V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 250µA @ 1200V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1.2KV 60A TO247 |
3.258 |
|
- | Standard | 1200V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 1.2KV 75A TO247 |
3.418 |
|
- | Standard | 1200V | 75A | 3.1V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 325ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 25A DO203AA |
3.486 |
|
- | Standard | 200V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
203 |
|
- | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
8.370 |
|
- | Standard | 100V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
6.192 |
|
- | Standard | 200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |