Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 271/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO201AD |
7.938 |
|
- | Standard | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 1KV 2A DO214AA |
4.950 |
|
- | Standard | 1000V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 4A DO214AB |
7.128 |
|
- | Standard | 1000V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 1000V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A DO214AB |
2.646 |
|
- | Standard | 50V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 50V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 12A DO214AB |
13.524 |
|
- | Standard | 1000V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 10V 4A U-DFN2020-2 |
6.030 |
|
Automotive, AEC-Q101 | Super Barrier | 10V | 4A | 500mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 10V | - | Surface Mount | 2-UFDFN | U-DFN2020-2 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 400V 1A SOD123FL |
6.912 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 100V 1A SOD123FL |
5.094 |
|
- | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 20pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
4.716 |
|
- | Standard | 200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
4.518 |
|
SUPERECTIFIER® | Standard | 400V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 2A DO214AA |
8.442 |
|
- | Standard | 1000V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 200V 3A DO201AD |
4.572 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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SMC Diode Solutions |
DIODE GEN PURP 400V 8A DPAK |
5.148 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 400V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A DO201AD |
7.524 |
|
- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO214AB |
2.844 |
|
- | Standard | 800V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO214 |
3.654 |
|
- | Standard | 1000V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO214AA |
8.910 |
|
- | Standard | 600V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
4.248 |
|
- | Standard | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
533 |
|
- | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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STMicroelectronics |
DIODE SCHOTTKY 170V 2A SMAFLAT |
8.964 |
|
ECOPACK® | Schottky | 170V | 2A | 820mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.8µA @ 170V | - | Surface Mount | DO-214AC, SMA Flat Leads | SMAflat | -40°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 50V 3A DO214AB |
7.866 |
|
- | Standard | 50V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 3A PMDU |
2.448 |
|
- | Schottky | 60V | 3A | 610mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 60V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 1A DO41 |
7.740 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 1µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 175°C (Max) |
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Comchip Technology |
DIODE GEN PURP 1KV 1A 1206 |
3.618 |
|
- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | - | 10pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 1206/SOD-123 | -65°C ~ 175°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1A SFLAT |
7.866 |
|
- | Schottky | 20V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 60pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
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Comchip Technology |
DIODE GEN PURP 1KV 6A R6 |
3.366 |
|
- | Standard | 1000V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
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Diodes Incorporated |
DIODE GEN PURP 100V 1.5A SMA |
3.546 |
|
- | Standard | 100V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 100V 6A R6 |
3.546 |
|
- | Standard | 100V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 100pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 150V 3A SMC |
7.920 |
|
- | Standard | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO201AD |
7.524 |
|
- | Schottky | 150V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |