Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 164/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
650V 16A SIC SBD |
9.324 |
|
- | Silicon Carbide Schottky | 650V | 23A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 887pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 150°C |
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Littelfuse |
SCHOTTKY DIODE SIC 1200V 10A |
8.868 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 17.5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 310pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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Littelfuse |
DIODE SCHOTTKY SIC 650V 8A DUAL |
14.268 |
|
Automotive, AEC-Q101, GEN2 | Silicon Carbide Schottky | 650V | 23A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 415pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
6.624 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-2 | TO-220 [K] | - |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 650V 25A TO220-2 |
15.396 |
|
- | Silicon Carbide Schottky | 650V | 25A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1085pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
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|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
23.496 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | 1.5V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 1000pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Littelfuse |
SIC SCHOTTKY DIOD 650V 20A TO220 |
12.354 |
|
Gen2 | Silicon Carbide Schottky | 650V | 45A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 960pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
7.932 |
|
- | Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 640pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
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SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
7.548 |
|
- | Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 640pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
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Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
21.048 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 1000pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
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|
ON Semiconductor |
650V 20A SIC SBD |
22.428 |
|
- | Silicon Carbide Schottky | 650V | 20A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1085pF @ 1V, 100kHz | Through Hole | TO-220-2 Full Pack | TO-220F-2FS | -55°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 15A TO220-2 |
19.344 |
|
- | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.75V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | 936pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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GeneSiC Semiconductor |
SIC DIODE 1200V 8A TO-220-2 |
18.012 |
|
- | Silicon Carbide Schottky | 1200V | 43A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 7µA @ 1200V | 545pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 400V 150A POWERTAB |
9.912 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 400V | 150A | 1.3V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 150V | - | Through Hole | PowerTab® | PowerTab® | -55°C ~ 175°C |
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Infineon Technologies |
SIC SCHOTTKY 1200V 15A TO247-2 |
8.472 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 49A (DC) | 1.65V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 124µA @ 1200V | 1050pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
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ON Semiconductor |
650V 20A SIC SBD |
11.004 |
|
- | Silicon Carbide Schottky | 650V | 25A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1085pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Littelfuse |
DIODE SCHOTTKY SIC 650V 10A DUAL |
10.800 |
|
Automotive, AEC-Q101, GEN2 | Silicon Carbide Schottky | 650V | 27A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
1200V 15A SIC SBD |
8.028 |
|
- | Silicon Carbide Schottky | 1200V | 26A (DC) | 1.75V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 936pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Littelfuse |
DIODE SIC SCHOTTKY 1200V 15A |
21.936 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 44A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 920pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Littelfuse |
SCHOTTKY DIODE SIC 1200V 15A |
10.320 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 24.5A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 454pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 1.2KV 15A TO247 |
8.406 |
|
- | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.5V @ 15A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
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GeneSiC Semiconductor |
SIC DIODE 1200V 10A TO-220-2 |
10.704 |
|
- | Silicon Carbide Schottky | 1200V | 54A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 660pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 650V 30A TO220-2 |
14.244 |
|
- | Silicon Carbide Schottky | 650V | 30A (DC) | 1.75V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 650V | 1705pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247 |
7.992 |
|
Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 303pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 700V 30A TO220-3 |
7.056 |
|
- | Silicon Carbide Schottky | 700V | 30A (DC) | 1.5V @ 30A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-220-3 | TO-220-3 | - |
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ON Semiconductor |
650V 30A SIC SBD |
9.720 |
|
- | Silicon Carbide Schottky | 650V | 26A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1705pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
9.960 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 780pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
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Cree/Wolfspeed |
ZRECTM 10A 1200V SIC SCHOTTKY DI |
21 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 31.5A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 754pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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ON Semiconductor |
SIC DIODE TO247 650V |
9.108 |
|
- | Silicon Carbide Schottky | 650V | 60A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 2530pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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ON Semiconductor |
1200V 10A AUTO SIC SBD |
9.276 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 17A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |