Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 110/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE GEN PURP 800V 4A AXIAL |
12.870 |
|
SWITCHMODE™ | Standard | 800V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 800V | - | Through Hole | DO-201AD, Axial | Axial | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 5A PMDS |
12.096 |
|
- | Schottky | 30V | 5A | 540mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 800V 2A DO15 |
33.228 |
|
- | Standard | 800V | 2A | 1.65V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO214AB |
17.184 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 3A DO214AA |
91.968 |
|
- | Schottky | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A TO277A |
16.200 |
|
FRED Pt® | Standard | 200V | 6A | 940mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 2µA @ 200V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 3A PMDS |
21.804 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3A | 560mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO213AB |
255.648 |
|
- | Schottky | 20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 110pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A DO213AB |
15.180 |
|
- | Schottky | 30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 110pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 3A DO214AA |
109.020 |
|
- | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 100V 2A PMDS |
13.038 |
|
Automotive, AEC-Q101 | Schottky | 100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15µA @ 100V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
14.334 |
|
FRED Pt® | Standard | 600V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 58ns | 5µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 200MA SOD523 |
55.848 |
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- | Schottky | 40V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 50µA @ 20V | - | Surface Mount | SC-79, SOD-523 | SOD-523 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A DO214AB |
31.908 |
|
- | Standard | 300V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3A DO214AB |
23.430 |
|
- | Standard | 50V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 50V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 200V 3A DO201AD |
33.708 |
|
- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 3µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO214AA |
26.388 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
15.066 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 100V | 4A | 930mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 2µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 3A DO201AD |
102.828 |
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- | Standard | 1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO213AB |
60.510 |
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- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 80pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF | GL41 (DO-213AB) | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 500MA SOT23 |
28.926 |
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- | Schottky | 40V | 500mA | 470mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 10V | 50pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 200V 3A SMC |
58.986 |
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- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 3µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC | 175°C (Max) |
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Diodes Incorporated |
DIODE SBR 20V 8A POWERDI5 |
44.274 |
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SBR® | Super Barrier | 20V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 2A SJP |
92.220 |
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- | Standard | 600V | 2A | 1.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 1KV 10A DO214AB |
52.428 |
|
- | Standard | 1000V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 1000V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 45V 10A TO277 |
30.138 |
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- | Schottky | 45V | 10A | 470mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DO214AB |
28.584 |
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- | Standard | 1000V | 8A | 985mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 1000V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2.4A TO277A |
29.016 |
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eSMP® | Avalanche | 600V | 2.4A (DC) | 962mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A D-PAK |
44.514 |
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Automotive, AEC-Q101, FRED Pt® | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 3µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A DPAK |
18.936 |
|
SWITCHMODE™ | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |