Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 1093/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 16A TO247AD |
6.048 |
|
Automotive, AEC-Q101 | Standard | 600V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 20A TO220AB |
4.644 |
|
- | Standard | 50V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 20A TO220AB |
5.400 |
|
Automotive, AEC-Q101 | Standard | 50V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 20A TO247AD |
5.202 |
|
- | Standard | 50V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 20A TO220AB |
3.222 |
|
- | Standard | 100V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 20A TO220AB |
6.228 |
|
Automotive, AEC-Q101 | Standard | 100V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 20A TO247AD |
3.942 |
|
- | Standard | 100V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 20A TO220AB |
2.016 |
|
- | Standard | 150V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 20A TO220AB |
2.466 |
|
Automotive, AEC-Q101 | Standard | 150V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 20A TO247AD |
6.552 |
|
- | Standard | 150V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 20A TO220AB |
3.150 |
|
Automotive, AEC-Q101 | Standard | 200V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 20A TO220AB |
8.658 |
|
Automotive, AEC-Q101 | Standard | 300V | 20A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 20A TO220AB |
8.622 |
|
Automotive, AEC-Q101 | Standard | 400V | 20A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A TO220AB |
3.582 |
|
- | Standard | 500V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A TO220AB |
4.842 |
|
Automotive, AEC-Q101 | Standard | 500V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A TO247AD |
7.776 |
|
- | Standard | 500V | 20A | 1.9V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A TO220AB |
3.942 |
|
- | Standard | 600V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A TO220AB |
8.262 |
|
Automotive, AEC-Q101 | Standard | 600V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 30A TO247AD |
4.554 |
|
- | Standard | 50V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 30A TO247AD |
8.910 |
|
Automotive, AEC-Q101 | Standard | 50V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 30A TO247AD |
6.786 |
|
- | Standard | 100V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 30A TO247AD |
4.788 |
|
Automotive, AEC-Q101 | Standard | 100V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 30A TO247AD |
2.628 |
|
- | Standard | 150V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 30A TO247AD |
2.178 |
|
Automotive, AEC-Q101 | Standard | 150V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 30A TO247AD |
7.920 |
|
Automotive, AEC-Q101 | Standard | 200V | 30A | 950mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 30A TO247AD |
7.056 |
|
- | Standard | 300V | 30A | 1.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 30A TO247AD |
5.418 |
|
Automotive, AEC-Q101 | Standard | 300V | 30A | 1.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 30A TO247AD |
5.436 |
|
Automotive, AEC-Q101 | Standard | 400V | 30A | 1.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 8A TO220AB |
4.824 |
|
- | Standard | 50V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 8A TO220AB |
6.858 |
|
Automotive, AEC-Q101 | Standard | 50V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |