Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 1033/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
6.732 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
5.724 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
7.074 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
2.898 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
6.498 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC |
4.266 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DUAL TO-263AB |
8.838 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DUAL TO-263AB |
6.264 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
AC/DC DIGITAL PLATFORM |
3.114 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO263-3-2 |
4.410 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | - |
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 10A D2PAK |
3.672 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 600V | 480pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 15A D2PAK |
6.228 |
|
- | Schottky | 60V | 15A | 620mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 60V | 720pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A D2PAK |
3.888 |
|
- | Standard | 600V | 20A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
6.498 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A D2PAK |
7.920 |
|
- | Standard | 1200V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 15A D2PAK |
6.642 |
|
FRED Pt® | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A L-FLAT |
8.532 |
|
- | Standard | 200V | 3A (DC) | 0.98V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A L-FLAT |
7.668 |
|
- | Standard | 200V | 3A (DC) | 0.98V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 3A L-FLAT |
6.840 |
|
- | Standard | 300V | 3A (DC) | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 3A L-FLAT |
4.986 |
|
- | Standard | 300V | 3A (DC) | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A L-FLAT |
2.070 |
|
- | Standard | 400V | 3A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A L-FLAT |
4.194 |
|
- | Standard | 400V | 3A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT |
2.772 |
|
- | Standard | 200V | 5A (DC) | 0.98V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT |
6.372 |
|
- | Standard | 200V | 5A (DC) | 0.98V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 5A L-FLAT |
4.752 |
|
- | Standard | 200V | 5A (DC) | 0.98V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 5A L-FLAT |
6.354 |
|
- | Standard | 300V | 5A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 300V 5A L-FLAT |
6.210 |
|
- | Standard | 300V | 5A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | - | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | - |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 5A L-FLAT |
7.020 |
|
- | Standard | 400V | 5A (DC) | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 5A L-FLAT |
4.770 |
|
- | Standard | 400V | 5A (DC) | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 10A L-FLAT |
3.454 |
|
- | Schottky | 30V | 10A (DC) | 0.47V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | 530pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |