Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 1003/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 900V 1.4A E-MELF |
5.040 |
|
Military, MIL-PRF-19500/590 | Standard | 900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 900V 1.4A E-MELF |
282 |
|
Military, MIL-PRF-19500/590 | Standard | 900V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 2µA @ 900V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 1.1KV 1.4A D5B |
4.104 |
|
Military, MIL-PRF-19500/590 | Standard | 1100V | 1.4A | 1.6V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | E-PAK | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 1KV 1.4A E-MELF |
2.844 |
|
Military, MIL-PRF-19500/590 | Standard | 1000V | 1.4A | 1.6V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1000V | - | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 50V 300MA B-MELF |
3.436 |
|
Military, MIL-PRF-19500/609 | Standard | 50V | 300mA | 1V @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 300MA UB |
8.208 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 300MA UB |
7.668 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 300MA UB |
3.672 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 300MA UB |
4.302 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA (DC) | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | - | Surface Mount | 3-SMD, No Lead | 3-UB (3.09x2.45) | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 50V 300MA D-MELF |
7.776 |
|
Military, MIL-PRF-19500/578 | Standard | 50V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 300MA D-MELF |
3.348 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO35 |
3.655 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
7.326 |
|
Military, MIL-PRF-19500/116 | Standard | 75V | 200mA | 1.2V @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Renesas Electronics America |
DIODE SCHOTTKY 600V 10A TO220FP |
6.390 |
|
- | Schottky | 600V | 10A (DC) | 1.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 10µA @ 600V | - | Surface Mount | TO-220-3 Full Pack | TO-220FP | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE SCHOTTKY 600V 15A TO220FP |
8.154 |
|
- | Schottky | 600V | 15A (DC) | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 360V 10A LDPAK |
6.444 |
|
- | Standard | 360V | 10A (DC) | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 360V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 360V 20A TO252 |
2.934 |
|
- | Standard | 360V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 360V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 430V 10A LDPAK |
6.822 |
|
- | Standard | 430V | 10A | 1.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GP 430V 10A TO220FP-2L |
2.592 |
|
- | Standard | 430V | 10A | 1.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 430V 20A TO252 |
4.878 |
|
- | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 430V 20A LDPAK |
3.240 |
|
- | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GP 430V 20A TO220FP-2L |
3.348 |
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- | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 600V 20A TO252 |
8.856 |
|
- | Standard | 600V | 20A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 600V 20A LDPAK |
4.410 |
|
- | Standard | 600V | 20A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 600V 20A LDPAK |
8.802 |
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- | Standard | 600V | 20A | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 600V 20A TO220FL |
3.924 |
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- | Standard | 600V | 20A | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-3 Full Pack | TO-220FL | -55°C ~ 150°C |
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Renesas Electronics America |
DIODE GEN PURP 600V 30A LDPAK |
5.760 |
|
- | Standard | 600V | 30A | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Surface Mount | SC-83 | 4-LDPAK | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 20V 1A DO41 |
2.286 |
|
- | Schottky | 20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 1A DO41 |
5.058 |
|
- | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
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Diodes Incorporated |
DIODE SCHOTTKY 50V 1A DO41 |
7.542 |
|
- | Schottky | 50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |