Gleichrichter - Arrays
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Arrays
Datensätze 11.588
Seite 212/387
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodenkonfiguration | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Strom - Durchschnitt gleichgerichtet (Io) (pro Diode) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Betriebstemperatur - Verbindungsstelle | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN 1KV 200A 3 TOWER |
4.266 |
|
- | 1 Pair Series Connection | Standard | 1000V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE GEN 1.2KV 200A 3 TOWER |
5.382 |
|
- | 1 Pair Series Connection | Standard | 1200V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE GEN 1.4KV 200A 3 TOWER |
3.204 |
|
- | 1 Pair Series Connection | Standard | 1400V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1400V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE GEN 1.6KV 200A 3 TOWER |
6.282 |
|
- | 1 Pair Series Connection | Standard | 1600V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 200A 3 TOWER |
3.562 |
|
- | 1 Pair Series Connection | Standard | 600V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 200A 3 TOWER |
8.928 |
|
- | 1 Pair Series Connection | Standard | 800V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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|
Sensata-Crydom |
DIODE MODULE 600V 55A |
2.862 |
|
- | 1 Pair Common Anode | Standard | 600V | 55A (DC) | 1.4V @ 165A | Standard Recovery >500ns, > 200mA (Io) | - | - | -40°C ~ 125°C | Chassis Mount | Module | Module |
|
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Infineon Technologies |
DIODE MODULE GP 1200V 89A |
3.400 |
|
- | 1 Pair Common Cathode | Standard | 1200V | 89A | 1.5V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 20V 500A 3TOWER |
4.914 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 20V 500A 3TOWER |
4.320 |
|
- | 1 Pair Common Anode | Schottky | 20V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 30V 500A 3TOWER |
7.398 |
|
- | 1 Pair Common Cathode | Schottky | 30V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 30V 500A 3TOWER |
6.804 |
|
- | 1 Pair Common Anode | Schottky | 30V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 35V 500A 3TOWER |
4.950 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 35V 500A 3TOWER |
6.822 |
|
- | 1 Pair Common Anode | Schottky | 35V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 40V 500A 3TOWER |
2.646 |
|
- | 1 Pair Common Cathode | Schottky | 40V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 40V 500A 3TOWER |
8.460 |
|
- | 1 Pair Common Anode | Schottky | 40V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 45V 500A 3TOWER |
2.340 |
|
- | 1 Pair Common Cathode | Schottky | 45V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 45V 500A 3TOWER |
7.434 |
|
- | 1 Pair Common Anode | Schottky | 45V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 60V 500A 3TOWER |
8.550 |
|
- | 1 Pair Common Cathode | Schottky | 60V | 500A (DC) | 800mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 60V 500A 3TOWER |
2.394 |
|
- | 1 Pair Common Anode | Schottky | 60V | 500A (DC) | 800mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 80V 500A 3TOWER |
4.500 |
|
- | 1 Pair Common Cathode | Schottky | 80V | 500A (DC) | 880mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 80V 500A 3TOWER |
7.308 |
|
- | 1 Pair Common Anode | Schottky | 80V | 500A (DC) | 880mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 50V 100A 3TOWER |
4.428 |
|
- | 1 Pair Common Cathode | Standard | 50V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 50V 100A 3TOWER |
3.168 |
|
- | 1 Pair Common Anode | Standard | 50V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 100A 3TOWER |
4.446 |
|
- | 1 Pair Common Cathode | Standard | 100V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 100A 3TOWER |
4.680 |
|
- | 1 Pair Common Anode | Standard | 100V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE ARRAY GP 200V 100A 3TOWER |
101 |
|
- | - | Standard | 200V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
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GeneSiC Semiconductor |
DIODE ARRAY GP REV POLAR 3TOWER |
8.208 |
|
- | - | Standard, Reverse Polarity | 200V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE ARRAY GP 400V 100A 3TOWER |
7.326 |
|
- | - | Standard | 400V | 100A (DC) | 1.35V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE ARRAY GP REV POLAR3TOWER |
8.568 |
|
- | - | Standard, Reverse Polarity | 400V | 100A (DC) | 1.35V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |